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GaAs/AlGaAs nanowire heterostructures studied by scanning tunneling microscopy

Ouattara, Lassana LU ; Mikkelsen, Anders LU ; Sköld, Niklas LU ; Bolinsson, Jessica LU ; Knaapen, Thijs ; Cavar, Elizabeta LU ; Seifert, Werner LU ; Samuelson, Lars LU and Lundgren, Edvin LU (2007) In Nano Letters 7(9). p.2859-2864
Abstract
We directly image the interior of GaAs/AlGaAs axial and radial nanowire heterostructures with atomic-scale resolution using scanning tunneling microscopy. We show that formation of monolayer sharp and smooth axial interfaces are possible even by vapor-phase epitaxy. However, we also find that instability of the ternary alloys formed in the Au seed fundamentally limits axial heterostructure control, inducing large segment asymmetries. We study radial core-shell nanowires, imaging even ultrathin submonolayer shells. We demonstrate how large twinning-induced morphological defects at the wire surfaces can be removed, ensuring the formation of wires with atomically flat sides.
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author
; ; ; ; ; ; ; and
organization
publishing date
type
Contribution to journal
publication status
published
subject
in
Nano Letters
volume
7
issue
9
pages
2859 - 2864
publisher
The American Chemical Society (ACS)
external identifiers
  • wos:000249501900057
  • scopus:34948907990
  • pmid:17722945
ISSN
1530-6992
DOI
10.1021/nl071550z
language
English
LU publication?
yes
id
4c7b81af-c0a1-43b0-9f01-04616a09dd3f (old id 656472)
date added to LUP
2016-04-01 16:58:20
date last changed
2022-03-15 04:16:47
@article{4c7b81af-c0a1-43b0-9f01-04616a09dd3f,
  abstract     = {{We directly image the interior of GaAs/AlGaAs axial and radial nanowire heterostructures with atomic-scale resolution using scanning tunneling microscopy. We show that formation of monolayer sharp and smooth axial interfaces are possible even by vapor-phase epitaxy. However, we also find that instability of the ternary alloys formed in the Au seed fundamentally limits axial heterostructure control, inducing large segment asymmetries. We study radial core-shell nanowires, imaging even ultrathin submonolayer shells. We demonstrate how large twinning-induced morphological defects at the wire surfaces can be removed, ensuring the formation of wires with atomically flat sides.}},
  author       = {{Ouattara, Lassana and Mikkelsen, Anders and Sköld, Niklas and Bolinsson, Jessica and Knaapen, Thijs and Cavar, Elizabeta and Seifert, Werner and Samuelson, Lars and Lundgren, Edvin}},
  issn         = {{1530-6992}},
  language     = {{eng}},
  number       = {{9}},
  pages        = {{2859--2864}},
  publisher    = {{The American Chemical Society (ACS)}},
  series       = {{Nano Letters}},
  title        = {{GaAs/AlGaAs nanowire heterostructures studied by scanning tunneling microscopy}},
  url          = {{http://dx.doi.org/10.1021/nl071550z}},
  doi          = {{10.1021/nl071550z}},
  volume       = {{7}},
  year         = {{2007}},
}