Nanowire single-electron memory
(2005) In Nano Letters 5(4). p.635-638- Abstract
- We demonstrate storage of electrons in semiconductor nanowires epitaxially grown from Au nanoparticles. The nanowires contain multiple tunnel junctions (MTJs) of InP barriers and InAs quantum dots designed such that the metal seed particles act as storage nodes. By positioning a second nanowire close to the seed particle it is possible to detect tunneling of individual electrons through the MTJ at 4.2 K. A strong memory effect is observed in the detector current when sweeping the writing voltage.
Please use this url to cite or link to this publication:
https://lup.lub.lu.se/record/245734
- author
- Thelander, Claes LU ; Nilsson, Henrik LU ; Jensen, Linus E and Samuelson, Lars LU
- organization
- publishing date
- 2005
- type
- Contribution to journal
- publication status
- published
- subject
- in
- Nano Letters
- volume
- 5
- issue
- 4
- pages
- 635 - 638
- publisher
- The American Chemical Society (ACS)
- external identifiers
-
- pmid:15826100
- wos:000228468800014
- scopus:18144390213
- pmid:15826100
- ISSN
- 1530-6992
- DOI
- 10.1021/nl050006s
- language
- English
- LU publication?
- yes
- id
- 6665004c-8b81-4552-b9dd-b7d4ccca400a (old id 245734)
- date added to LUP
- 2016-04-01 17:08:14
- date last changed
- 2022-03-30 20:47:21
@article{6665004c-8b81-4552-b9dd-b7d4ccca400a, abstract = {{We demonstrate storage of electrons in semiconductor nanowires epitaxially grown from Au nanoparticles. The nanowires contain multiple tunnel junctions (MTJs) of InP barriers and InAs quantum dots designed such that the metal seed particles act as storage nodes. By positioning a second nanowire close to the seed particle it is possible to detect tunneling of individual electrons through the MTJ at 4.2 K. A strong memory effect is observed in the detector current when sweeping the writing voltage.}}, author = {{Thelander, Claes and Nilsson, Henrik and Jensen, Linus E and Samuelson, Lars}}, issn = {{1530-6992}}, language = {{eng}}, number = {{4}}, pages = {{635--638}}, publisher = {{The American Chemical Society (ACS)}}, series = {{Nano Letters}}, title = {{Nanowire single-electron memory}}, url = {{http://dx.doi.org/10.1021/nl050006s}}, doi = {{10.1021/nl050006s}}, volume = {{5}}, year = {{2005}}, }