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InAs nanowires grown by MOVPE

Dick Thelander, Kimberly LU ; Deppert, Knut LU ; Samuelson, Lars LU and Seifert, Werner LU (2007) In Journal of Crystal Growth 298. p.631-634
Abstract
Epitaxial growth of Au-assisted InAs nanowires using metal organic vapour phase epitaxy is investigated. The growth rate and morphology of nanowires as a function of growth temperature, substrate material and precursor flows are discussed. It is observed that tapering increases with both In and As precursor flows, but decreases with temperature. Finally, we report growth of InAs nanowires on both InAs and InP substrates, with those grown on InAs substrates exhibiting more tapered shape. (c) 2006 Elsevier B.V. All rights reserved.
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author
organization
publishing date
type
Contribution to journal
publication status
published
subject
keywords
semiconducting III-V, nanostructures, metalorganic vapour phase epitaxy, material
in
Journal of Crystal Growth
volume
298
pages
631 - 634
publisher
Elsevier
external identifiers
  • wos:000244622600148
  • scopus:33846423161
ISSN
0022-0248
DOI
10.1016/j.jcrysgro.2006.10.083
language
English
LU publication?
yes
id
f5d1f9df-89d7-4062-9db8-cff7b89cb79c (old id 672635)
date added to LUP
2007-12-10 14:33:00
date last changed
2017-01-01 07:00:14
@article{f5d1f9df-89d7-4062-9db8-cff7b89cb79c,
  abstract     = {Epitaxial growth of Au-assisted InAs nanowires using metal organic vapour phase epitaxy is investigated. The growth rate and morphology of nanowires as a function of growth temperature, substrate material and precursor flows are discussed. It is observed that tapering increases with both In and As precursor flows, but decreases with temperature. Finally, we report growth of InAs nanowires on both InAs and InP substrates, with those grown on InAs substrates exhibiting more tapered shape. (c) 2006 Elsevier B.V. All rights reserved.},
  author       = {Dick Thelander, Kimberly and Deppert, Knut and Samuelson, Lars and Seifert, Werner},
  issn         = {0022-0248},
  keyword      = {semiconducting III-V,nanostructures,metalorganic vapour phase epitaxy,material},
  language     = {eng},
  pages        = {631--634},
  publisher    = {Elsevier},
  series       = {Journal of Crystal Growth},
  title        = {InAs nanowires grown by MOVPE},
  url          = {http://dx.doi.org/10.1016/j.jcrysgro.2006.10.083},
  volume       = {298},
  year         = {2007},
}