The structure of <1 1 1 > B oriented GaP nanowires
(2007) In Journal of Crystal Growth 298. p.635-639- Abstract
- Nanowires of zinc blende crystal structure, grown in the < 111 > B direction usually have a large number of twin plane defects. In order to investigate this phenomenon, we grow GaP nanowires with metal-organic vapor phase epitaxy. By rotating the nanowires in a high resolution transmission electron microscope, we show that the nanowire segments between the twin planes are of octahedral shape and are terminated by {111} facets. Due to the alternating orientations of these twin octahedra, the sidewalls of the nanowires can be described as microfaceted surfaces with an overall orientation of 11 1 2}, but composed of alternating 11 1 I}A and {1 I 1}B facets. Moreover, the segment thicknesses follow exponential distributions, which show... (More)
- Nanowires of zinc blende crystal structure, grown in the < 111 > B direction usually have a large number of twin plane defects. In order to investigate this phenomenon, we grow GaP nanowires with metal-organic vapor phase epitaxy. By rotating the nanowires in a high resolution transmission electron microscope, we show that the nanowire segments between the twin planes are of octahedral shape and are terminated by {111} facets. Due to the alternating orientations of these twin octahedra, the sidewalls of the nanowires can be described as microfaceted surfaces with an overall orientation of 11 1 2}, but composed of alternating 11 1 I}A and {1 I 1}B facets. Moreover, the segment thicknesses follow exponential distributions, which show that there is a certain probability of twin plane formation, which is independent of segment thickness. (c) 2006 Elsevier B.V. All rights reserved. (Less)
Please use this url to cite or link to this publication:
https://lup.lub.lu.se/record/672640
- author
- Johansson, Jonas LU ; Karlsson, Lisa LU ; Svensson, Patrik ; Mårtensson, Thomas LU ; Wacaser, Brent LU ; Deppert, Knut LU and Samuelson, Lars LU
- organization
- publishing date
- 2007
- type
- Contribution to journal
- publication status
- published
- subject
- keywords
- metalorganic vapor phase epitaxy, nanomaterials, crystal morphology, planar defects
- in
- Journal of Crystal Growth
- volume
- 298
- pages
- 635 - 639
- publisher
- Elsevier
- external identifiers
-
- wos:000244622600149
- scopus:33846410691
- ISSN
- 0022-0248
- DOI
- 10.1016/j.jcrysgro.2006.10.175
- language
- English
- LU publication?
- yes
- additional info
- The information about affiliations in this record was updated in December 2015. The record was previously connected to the following departments: Solid State Physics (011013006), Polymer and Materials Chemistry (LTH) (011001041)
- id
- 7d55a8e9-d785-4a23-a298-838dbb684eea (old id 672640)
- date added to LUP
- 2016-04-01 16:39:05
- date last changed
- 2022-01-28 21:12:10
@article{7d55a8e9-d785-4a23-a298-838dbb684eea, abstract = {{Nanowires of zinc blende crystal structure, grown in the < 111 > B direction usually have a large number of twin plane defects. In order to investigate this phenomenon, we grow GaP nanowires with metal-organic vapor phase epitaxy. By rotating the nanowires in a high resolution transmission electron microscope, we show that the nanowire segments between the twin planes are of octahedral shape and are terminated by {111} facets. Due to the alternating orientations of these twin octahedra, the sidewalls of the nanowires can be described as microfaceted surfaces with an overall orientation of 11 1 2}, but composed of alternating 11 1 I}A and {1 I 1}B facets. Moreover, the segment thicknesses follow exponential distributions, which show that there is a certain probability of twin plane formation, which is independent of segment thickness. (c) 2006 Elsevier B.V. All rights reserved.}}, author = {{Johansson, Jonas and Karlsson, Lisa and Svensson, Patrik and Mårtensson, Thomas and Wacaser, Brent and Deppert, Knut and Samuelson, Lars}}, issn = {{0022-0248}}, keywords = {{metalorganic vapor phase epitaxy; nanomaterials; crystal morphology; planar defects}}, language = {{eng}}, pages = {{635--639}}, publisher = {{Elsevier}}, series = {{Journal of Crystal Growth}}, title = {{The structure of <1 1 1 > B oriented GaP nanowires}}, url = {{http://dx.doi.org/10.1016/j.jcrysgro.2006.10.175}}, doi = {{10.1016/j.jcrysgro.2006.10.175}}, volume = {{298}}, year = {{2007}}, }