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The structure of <1 1 1 > B oriented GaP nanowires

Johansson, Jonas LU ; Karlsson, Lisa LU ; Svensson, Patrik; Mårtensson, Thomas LU ; Wacaser, Brent LU ; Deppert, Knut LU and Samuelson, Lars LU (2007) In Journal of Crystal Growth 298. p.635-639
Abstract
Nanowires of zinc blende crystal structure, grown in the < 111 > B direction usually have a large number of twin plane defects. In order to investigate this phenomenon, we grow GaP nanowires with metal-organic vapor phase epitaxy. By rotating the nanowires in a high resolution transmission electron microscope, we show that the nanowire segments between the twin planes are of octahedral shape and are terminated by {111} facets. Due to the alternating orientations of these twin octahedra, the sidewalls of the nanowires can be described as microfaceted surfaces with an overall orientation of 11 1 2}, but composed of alternating 11 1 I}A and {1 I 1}B facets. Moreover, the segment thicknesses follow exponential distributions, which show... (More)
Nanowires of zinc blende crystal structure, grown in the < 111 > B direction usually have a large number of twin plane defects. In order to investigate this phenomenon, we grow GaP nanowires with metal-organic vapor phase epitaxy. By rotating the nanowires in a high resolution transmission electron microscope, we show that the nanowire segments between the twin planes are of octahedral shape and are terminated by {111} facets. Due to the alternating orientations of these twin octahedra, the sidewalls of the nanowires can be described as microfaceted surfaces with an overall orientation of 11 1 2}, but composed of alternating 11 1 I}A and {1 I 1}B facets. Moreover, the segment thicknesses follow exponential distributions, which show that there is a certain probability of twin plane formation, which is independent of segment thickness. (c) 2006 Elsevier B.V. All rights reserved. (Less)
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author
organization
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type
Contribution to journal
publication status
published
subject
keywords
metalorganic vapor phase epitaxy, nanomaterials, crystal morphology, planar defects
in
Journal of Crystal Growth
volume
298
pages
635 - 639
publisher
Elsevier
external identifiers
  • wos:000244622600149
  • scopus:33846410691
ISSN
0022-0248
DOI
10.1016/j.jcrysgro.2006.10.175
language
English
LU publication?
yes
id
7d55a8e9-d785-4a23-a298-838dbb684eea (old id 672640)
date added to LUP
2007-12-13 11:53:33
date last changed
2017-10-08 04:21:07
@article{7d55a8e9-d785-4a23-a298-838dbb684eea,
  abstract     = {Nanowires of zinc blende crystal structure, grown in the &lt; 111 &gt; B direction usually have a large number of twin plane defects. In order to investigate this phenomenon, we grow GaP nanowires with metal-organic vapor phase epitaxy. By rotating the nanowires in a high resolution transmission electron microscope, we show that the nanowire segments between the twin planes are of octahedral shape and are terminated by {111} facets. Due to the alternating orientations of these twin octahedra, the sidewalls of the nanowires can be described as microfaceted surfaces with an overall orientation of 11 1 2}, but composed of alternating 11 1 I}A and {1 I 1}B facets. Moreover, the segment thicknesses follow exponential distributions, which show that there is a certain probability of twin plane formation, which is independent of segment thickness. (c) 2006 Elsevier B.V. All rights reserved.},
  author       = {Johansson, Jonas and Karlsson, Lisa and Svensson, Patrik and Mårtensson, Thomas and Wacaser, Brent and Deppert, Knut and Samuelson, Lars},
  issn         = {0022-0248},
  keyword      = {metalorganic vapor phase epitaxy,nanomaterials,crystal morphology,planar defects},
  language     = {eng},
  pages        = {635--639},
  publisher    = {Elsevier},
  series       = {Journal of Crystal Growth},
  title        = {The structure of <1 1 1 > B oriented GaP nanowires},
  url          = {http://dx.doi.org/10.1016/j.jcrysgro.2006.10.175},
  volume       = {298},
  year         = {2007},
}