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Strain mapping in free-standing heterostructured wurtzite InAs/InP nanowires

Larsson, Magnus LU ; Wagner, Jakob LU ; Wallin, Mathias LU ; Håkansson, Paul LU ; Fröberg, Linus LU ; Samuelson, Lars LU and Wallenberg, Reine LU (2007) In Nanotechnology 18(1).
Abstract
The strain distribution in heterostructured wurtzite InAs/InP nanowires is measured by a peak finding technique using high resolution transmission electron microscopy images. We find that nanowires with a diameter of about 20 nm show a 10 nm strained area over the InAs/InP interface and the rest of the wire has a relaxed lattice structure. The lattice parameters and elastic properties for the wurtzite structure of InAs and InP are calculated and a nanowire interface is simulated using finite element calculations. Both the method and the experimental results are validated using a combination of finite element calculations and image simulations.
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author
; ; ; ; ; and
organization
publishing date
type
Contribution to journal
publication status
published
subject
in
Nanotechnology
volume
18
issue
1
article number
015504
publisher
IOP Publishing
external identifiers
  • wos:000243836700019
  • scopus:33846834038
ISSN
0957-4484
DOI
10.1088/0957-4484/18/1/015504
language
English
LU publication?
yes
additional info
The information about affiliations in this record was updated in December 2015. The record was previously connected to the following departments: Solid Mechanics (011094009), Solid State Physics (011013006), Polymer and Materials Chemistry (LTH) (011001041)
id
995093a7-a5ec-4626-b3e8-0c9daed4fc81 (old id 675997)
alternative location
http://www.iop.org/EJ/abstract/0957-4484/18/1/015504
http://www.ladon.se/cv/documents/abstractNODE2006.pdf
date added to LUP
2016-04-01 12:13:14
date last changed
2025-01-17 14:38:36
@article{995093a7-a5ec-4626-b3e8-0c9daed4fc81,
  abstract     = {{The strain distribution in heterostructured wurtzite InAs/InP nanowires is measured by a peak finding technique using high resolution transmission electron microscopy images. We find that nanowires with a diameter of about 20 nm show a 10 nm strained area over the InAs/InP interface and the rest of the wire has a relaxed lattice structure. The lattice parameters and elastic properties for the wurtzite structure of InAs and InP are calculated and a nanowire interface is simulated using finite element calculations. Both the method and the experimental results are validated using a combination of finite element calculations and image simulations.}},
  author       = {{Larsson, Magnus and Wagner, Jakob and Wallin, Mathias and Håkansson, Paul and Fröberg, Linus and Samuelson, Lars and Wallenberg, Reine}},
  issn         = {{0957-4484}},
  language     = {{eng}},
  number       = {{1}},
  publisher    = {{IOP Publishing}},
  series       = {{Nanotechnology}},
  title        = {{Strain mapping in free-standing heterostructured wurtzite InAs/InP nanowires}},
  url          = {{http://dx.doi.org/10.1088/0957-4484/18/1/015504}},
  doi          = {{10.1088/0957-4484/18/1/015504}},
  volume       = {{18}},
  year         = {{2007}},
}