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Strain mapping in free-standing heterostructured wurtzite InAs/InP nanowires

Larsson, Magnus LU ; Wagner, Jakob LU ; Wallin, Mathias LU ; Håkansson, Paul LU ; Fröberg, Linus LU ; Samuelson, Lars LU and Wallenberg, Reine LU (2007) In Nanotechnology 18(1).
Abstract
The strain distribution in heterostructured wurtzite InAs/InP nanowires is measured by a peak finding technique using high resolution transmission electron microscopy images. We find that nanowires with a diameter of about 20 nm show a 10 nm strained area over the InAs/InP interface and the rest of the wire has a relaxed lattice structure. The lattice parameters and elastic properties for the wurtzite structure of InAs and InP are calculated and a nanowire interface is simulated using finite element calculations. Both the method and the experimental results are validated using a combination of finite element calculations and image simulations.
Please use this url to cite or link to this publication:
author
organization
publishing date
type
Contribution to journal
publication status
published
subject
in
Nanotechnology
volume
18
issue
1
publisher
IOP Publishing
external identifiers
  • wos:000243836700019
  • scopus:33846834038
ISSN
0957-4484
DOI
10.1088/0957-4484/18/1/015504
language
English
LU publication?
yes
id
995093a7-a5ec-4626-b3e8-0c9daed4fc81 (old id 675997)
alternative location
http://www.iop.org/EJ/abstract/0957-4484/18/1/015504
http://www.ladon.se/cv/documents/abstractNODE2006.pdf
date added to LUP
2007-12-04 17:29:59
date last changed
2017-11-12 03:27:22
@article{995093a7-a5ec-4626-b3e8-0c9daed4fc81,
  abstract     = {The strain distribution in heterostructured wurtzite InAs/InP nanowires is measured by a peak finding technique using high resolution transmission electron microscopy images. We find that nanowires with a diameter of about 20 nm show a 10 nm strained area over the InAs/InP interface and the rest of the wire has a relaxed lattice structure. The lattice parameters and elastic properties for the wurtzite structure of InAs and InP are calculated and a nanowire interface is simulated using finite element calculations. Both the method and the experimental results are validated using a combination of finite element calculations and image simulations.},
  articleno    = {015504},
  author       = {Larsson, Magnus and Wagner, Jakob and Wallin, Mathias and Håkansson, Paul and Fröberg, Linus and Samuelson, Lars and Wallenberg, Reine},
  issn         = {0957-4484},
  language     = {eng},
  number       = {1},
  publisher    = {IOP Publishing},
  series       = {Nanotechnology},
  title        = {Strain mapping in free-standing heterostructured wurtzite InAs/InP nanowires},
  url          = {http://dx.doi.org/10.1088/0957-4484/18/1/015504},
  volume       = {18},
  year         = {2007},
}