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Optimization of Au-assisted InAs nanowires grown by MOVPE

Dick Thelander, Kimberly LU ; Deppert, Knut LU orcid ; Samuelson, Lars LU and Seifert, Werner LU (2006) In Journal of Crystal Growth 297(2). p.326-333
Abstract
Epitaxially-grown InAs nanowires may have great potential for nanowire device applications, due to the high electron mobility and narrow direct band gap of this material. Various applications will most likely require different selected growth conditions, due to such factors as temperature-sensitive substrates or pressure-dependent intrinsic doping. However, it has been reported that InAs nanowires are more sensitive to growth conditions than nanowires of other similar III-V materials. Here we discuss the effect of growth conditions on the morphology and growth rate of InAs nanowires, with the aim of determining the optimum growth achievable under various conditions. Growth temperature, relative and absolute precursor flows, seed particle... (More)
Epitaxially-grown InAs nanowires may have great potential for nanowire device applications, due to the high electron mobility and narrow direct band gap of this material. Various applications will most likely require different selected growth conditions, due to such factors as temperature-sensitive substrates or pressure-dependent intrinsic doping. However, it has been reported that InAs nanowires are more sensitive to growth conditions than nanowires of other similar III-V materials. Here we discuss the effect of growth conditions on the morphology and growth rate of InAs nanowires, with the aim of determining the optimum growth achievable under various conditions. Growth temperature, relative and absolute precursor flows, seed particle size and density, and substrate type are discussed. (c) 2006 Elsevier B.V. All rights reserved. (Less)
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author
; ; and
organization
publishing date
type
Contribution to journal
publication status
published
subject
keywords
semiconducting III-V, nanostructures, metalorganic vapor phase epitaxy, material
in
Journal of Crystal Growth
volume
297
issue
2
pages
326 - 333
publisher
Elsevier
external identifiers
  • wos:000243812100012
  • scopus:33845570513
ISSN
0022-0248
DOI
10.1016/j.jcrysgro.2006.09.054
language
English
LU publication?
yes
id
9b0effb8-b375-4fc9-8abd-bcfd6d5bed5e (old id 676177)
date added to LUP
2016-04-01 16:22:08
date last changed
2022-02-20 05:33:51
@article{9b0effb8-b375-4fc9-8abd-bcfd6d5bed5e,
  abstract     = {{Epitaxially-grown InAs nanowires may have great potential for nanowire device applications, due to the high electron mobility and narrow direct band gap of this material. Various applications will most likely require different selected growth conditions, due to such factors as temperature-sensitive substrates or pressure-dependent intrinsic doping. However, it has been reported that InAs nanowires are more sensitive to growth conditions than nanowires of other similar III-V materials. Here we discuss the effect of growth conditions on the morphology and growth rate of InAs nanowires, with the aim of determining the optimum growth achievable under various conditions. Growth temperature, relative and absolute precursor flows, seed particle size and density, and substrate type are discussed. (c) 2006 Elsevier B.V. All rights reserved.}},
  author       = {{Dick Thelander, Kimberly and Deppert, Knut and Samuelson, Lars and Seifert, Werner}},
  issn         = {{0022-0248}},
  keywords     = {{semiconducting III-V; nanostructures; metalorganic vapor phase epitaxy; material}},
  language     = {{eng}},
  number       = {{2}},
  pages        = {{326--333}},
  publisher    = {{Elsevier}},
  series       = {{Journal of Crystal Growth}},
  title        = {{Optimization of Au-assisted InAs nanowires grown by MOVPE}},
  url          = {{http://dx.doi.org/10.1016/j.jcrysgro.2006.09.054}},
  doi          = {{10.1016/j.jcrysgro.2006.09.054}},
  volume       = {{297}},
  year         = {{2006}},
}