Evolution of the near-infrared-to-ultraviolet model dielectric function of InAs from room temperature to 250 °C determined by spectroscopic ellipsometry
Sorensen, Preston R. ; Kilic, Ufuk ; Traouli, Yousra ; Korlacki, Rafał ; Schubert, Eva and Schubert, Mathias LU
(2026)
In Journal of Applied Physics
139(20).
- Abstract
We present a model dielectric function composed of critical point functions in order to parameterize the temperature and wavelength dependencies of the dielectric function of InAs. This model is based on Adachi’s critical point model, with simple wavelength-dependent analytical functions whose parameters change linearly with temperature. The calculated dielectric function at room temperature is in excellent agreement with previously published data. We apply this model in the spectral range of 0.7–5 eV and in the temperature range of room temperature to 250 ° C with in situ spectroscopic ellipsometry measurements on an InAs substrate. Spectroscopic measurements were performed continuously while slowly ramping sample temperature in a... (More)
We present a model dielectric function composed of critical point functions in order to parameterize the temperature and wavelength dependencies of the dielectric function of InAs. This model is based on Adachi’s critical point model, with simple wavelength-dependent analytical functions whose parameters change linearly with temperature. The calculated dielectric function at room temperature is in excellent agreement with previously published data. We apply this model in the spectral range of 0.7–5 eV and in the temperature range of room temperature to 250 ° C with in situ spectroscopic ellipsometry measurements on an InAs substrate. Spectroscopic measurements were performed continuously while slowly ramping sample temperature in a stepwise manner in the controlled ambient environment of an atomic layer deposition system. We find that our model matches excellently with all experimental data with deviations less than 2% in pseudoepsilon. Our model permits smooth interpolation of the dielectric function of InAs for any intermediate temperature in the range studied and therefore can be used to monitor temperature, for example, during thin film deposition processes by in situ spectroscopic ellipsometry. We propose that this model can be applied to other semiconductors as well as wider temperature ranges.
(Less)
- author
- Sorensen, Preston R.
; Kilic, Ufuk
; Traouli, Yousra
; Korlacki, Rafał
; Schubert, Eva
and Schubert, Mathias
LU
- organization
- publishing date
- 2026-05
- type
- Contribution to journal
- publication status
- published
- subject
- in
- Journal of Applied Physics
- volume
- 139
- issue
- 20
- article number
- 205102
- publisher
- American Institute of Physics (AIP)
- external identifiers
-
- scopus:105039871391
- ISSN
- 0021-8979
- DOI
- 10.1063/5.0309603
- language
- English
- LU publication?
- yes
- id
- 67a4bb2f-4d34-416c-bc39-f3d3b49b627a
- date added to LUP
- 2026-07-02 14:38:59
- date last changed
- 2026-07-02 14:40:06
@article{67a4bb2f-4d34-416c-bc39-f3d3b49b627a,
abstract = {{<p>We present a model dielectric function composed of critical point functions in order to parameterize the temperature and wavelength dependencies of the dielectric function of InAs. This model is based on Adachi’s critical point model, with simple wavelength-dependent analytical functions whose parameters change linearly with temperature. The calculated dielectric function at room temperature is in excellent agreement with previously published data. We apply this model in the spectral range of 0.7–5 eV and in the temperature range of room temperature to 250 ° C with in situ spectroscopic ellipsometry measurements on an InAs substrate. Spectroscopic measurements were performed continuously while slowly ramping sample temperature in a stepwise manner in the controlled ambient environment of an atomic layer deposition system. We find that our model matches excellently with all experimental data with deviations less than 2% in pseudoepsilon. Our model permits smooth interpolation of the dielectric function of InAs for any intermediate temperature in the range studied and therefore can be used to monitor temperature, for example, during thin film deposition processes by in situ spectroscopic ellipsometry. We propose that this model can be applied to other semiconductors as well as wider temperature ranges.</p>}},
author = {{Sorensen, Preston R. and Kilic, Ufuk and Traouli, Yousra and Korlacki, Rafał and Schubert, Eva and Schubert, Mathias}},
issn = {{0021-8979}},
language = {{eng}},
number = {{20}},
publisher = {{American Institute of Physics (AIP)}},
series = {{Journal of Applied Physics}},
title = {{Evolution of the near-infrared-to-ultraviolet model dielectric function of InAs from room temperature to 250 °C determined by spectroscopic ellipsometry}},
url = {{http://dx.doi.org/10.1063/5.0309603}},
doi = {{10.1063/5.0309603}},
volume = {{139}},
year = {{2026}},
}