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Si measurements : SiOx on Si

Kalem, S.; Tekin, S. B.; Kaya, Z. E.; Hannas, A. E. and Sundström, Villy LU (2017) 2017 Joint International EUROSOl Workshop and International Conference on Ultimate Integration on Silicon-ULIS, EUROSOI-ULIS 2017 In Joint International EUROSOl Workshop and International Conference on Ultimate Integration on Silicon-ULIS, EUROSOI-ULIS 2017 - Proceedings p.235-238
Abstract

We review the results of silicon measurements, which we have performed on suboxide SiOx formed on n and p type Si wafers with different surface textures. Localized vibrational modes through Raman and FTIR, light emission properties by photoluminescence (PL), energy critical points for optical transitions, excited state dynamics and non-linear electrical properties can be used as effective methods in investigating thin oxide layers on Si. Infrared vibrational spectrum of Si-O-Si bondings in terms of transverse-optic (TO) and longitudinal-optic (LO) phonons indicating that disorder induced LO-TO optical mode coupling can be an effective tool in assessing the structural quality of the SiOx. Excited carrier dynamics and switching... (More)

We review the results of silicon measurements, which we have performed on suboxide SiOx formed on n and p type Si wafers with different surface textures. Localized vibrational modes through Raman and FTIR, light emission properties by photoluminescence (PL), energy critical points for optical transitions, excited state dynamics and non-linear electrical properties can be used as effective methods in investigating thin oxide layers on Si. Infrared vibrational spectrum of Si-O-Si bondings in terms of transverse-optic (TO) and longitudinal-optic (LO) phonons indicating that disorder induced LO-TO optical mode coupling can be an effective tool in assessing the structural quality of the SiOx. Excited carrier dynamics and switching mechanisms can provide critical information about electronic quality of sub oxides for applications in CMOS circuits.

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author
organization
publishing date
type
Chapter in Book/Report/Conference proceeding
publication status
published
subject
keywords
electrical and optical methods, ellipsometry, FDSOI, photoluminescence, SiO on Si
in
Joint International EUROSOl Workshop and International Conference on Ultimate Integration on Silicon-ULIS, EUROSOI-ULIS 2017 - Proceedings
pages
4 pages
publisher
Institute of Electrical and Electronics Engineers Inc.
conference name
2017 Joint International EUROSOl Workshop and International Conference on Ultimate Integration on Silicon-ULIS, EUROSOI-ULIS 2017
external identifiers
  • scopus:85026747893
ISSN
2472-9132
ISBN
9781509053131
DOI
10.1109/ULIS.2017.7962571
language
English
LU publication?
yes
id
70445c2c-bec9-4102-83d4-2cf8478f216c
date added to LUP
2017-09-01 13:02:52
date last changed
2018-01-07 12:17:05
@inproceedings{70445c2c-bec9-4102-83d4-2cf8478f216c,
  abstract     = {<p>We review the results of silicon measurements, which we have performed on suboxide SiO<sub>x</sub> formed on n and p type Si wafers with different surface textures. Localized vibrational modes through Raman and FTIR, light emission properties by photoluminescence (PL), energy critical points for optical transitions, excited state dynamics and non-linear electrical properties can be used as effective methods in investigating thin oxide layers on Si. Infrared vibrational spectrum of Si-O-Si bondings in terms of transverse-optic (TO) and longitudinal-optic (LO) phonons indicating that disorder induced LO-TO optical mode coupling can be an effective tool in assessing the structural quality of the SiOx. Excited carrier dynamics and switching mechanisms can provide critical information about electronic quality of sub oxides for applications in CMOS circuits.</p>},
  author       = {Kalem, S. and Tekin, S. B. and Kaya, Z. E. and Hannas, A. E. and Sundström, Villy},
  booktitle    = {Joint International EUROSOl Workshop and International Conference on Ultimate Integration on Silicon-ULIS, EUROSOI-ULIS 2017 - Proceedings},
  isbn         = {9781509053131},
  issn         = {2472-9132},
  keyword      = {electrical and optical methods,ellipsometry,FDSOI,photoluminescence,SiO on Si},
  language     = {eng},
  month        = {06},
  pages        = {235--238},
  publisher    = {Institute of Electrical and Electronics Engineers Inc.},
  title        = {Si measurements : SiO<sub>x</sub> on Si},
  url          = {http://dx.doi.org/10.1109/ULIS.2017.7962571},
  year         = {2017},
}