Fast Strain Mapping of Nanowire Light-Emitting Diodes Using Nanofocused X-ray Beams.
(2015) In ACS Nano 9(7). p.6978-6984- Abstract
- X-ray nanobeams are unique nondestructive probes that allow direct measurements of the nanoscale strain distribution and composition inside the micrometer thick layered structures that are found in most electronic device architectures. However, the method is usually extremely time-consuming, and as a result, data sets are often constrained to a few or even single objects. Here we demonstrate that by special design of a nanofocused X-ray beam diffraction experiment we can (in a single 2D scan with no sample rotation) measure the individual strain and composition profiles of many structures in an array of upright standing nanowires. We make use of the observation that in the generic nanowire device configuration, which is found in high-speed... (More)
- X-ray nanobeams are unique nondestructive probes that allow direct measurements of the nanoscale strain distribution and composition inside the micrometer thick layered structures that are found in most electronic device architectures. However, the method is usually extremely time-consuming, and as a result, data sets are often constrained to a few or even single objects. Here we demonstrate that by special design of a nanofocused X-ray beam diffraction experiment we can (in a single 2D scan with no sample rotation) measure the individual strain and composition profiles of many structures in an array of upright standing nanowires. We make use of the observation that in the generic nanowire device configuration, which is found in high-speed transistors, solar cells, and light-emitting diodes, each wire exhibits very small degrees of random tilts and twists toward the substrate. Although the tilt and twist are very small, they give a new contrast mechanism between different wires. In the present case, we image complex nanowires for nanoLED fabrication and compare to theoretical simulations, demonstrating that this fast method is suitable for real nanostructured devices. (Less)
Please use this url to cite or link to this publication:
https://lup.lub.lu.se/record/7484593
- author
- organization
- publishing date
- 2015
- type
- Contribution to journal
- publication status
- published
- subject
- in
- ACS Nano
- volume
- 9
- issue
- 7
- pages
- 6978 - 6984
- publisher
- The American Chemical Society (ACS)
- external identifiers
-
- pmid:26090689
- wos:000358823200034
- scopus:84938081665
- pmid:26090689
- ISSN
- 1936-086X
- DOI
- 10.1021/acsnano.5b01291
- language
- English
- LU publication?
- yes
- id
- 146cbe7f-1251-4993-9616-736b0eea11a6 (old id 7484593)
- alternative location
- http://www.ncbi.nlm.nih.gov/pubmed/26090689?dopt=Abstract
- date added to LUP
- 2016-04-01 10:12:43
- date last changed
- 2023-11-09 14:54:56
@article{146cbe7f-1251-4993-9616-736b0eea11a6,
abstract = {{X-ray nanobeams are unique nondestructive probes that allow direct measurements of the nanoscale strain distribution and composition inside the micrometer thick layered structures that are found in most electronic device architectures. However, the method is usually extremely time-consuming, and as a result, data sets are often constrained to a few or even single objects. Here we demonstrate that by special design of a nanofocused X-ray beam diffraction experiment we can (in a single 2D scan with no sample rotation) measure the individual strain and composition profiles of many structures in an array of upright standing nanowires. We make use of the observation that in the generic nanowire device configuration, which is found in high-speed transistors, solar cells, and light-emitting diodes, each wire exhibits very small degrees of random tilts and twists toward the substrate. Although the tilt and twist are very small, they give a new contrast mechanism between different wires. In the present case, we image complex nanowires for nanoLED fabrication and compare to theoretical simulations, demonstrating that this fast method is suitable for real nanostructured devices.}},
author = {{Stankevič, Tomaš and Hilner, Emelie and Seiboth, Frank and Ciechonski, Rafal and Vescovi, Giuliano and Kryliouk, Olga and Johansson, Ulf and Samuelson, Lars and Wellenreuther, Gerd and Falkenberg, Gerald and Feidenhans'l, Robert and Mikkelsen, Anders}},
issn = {{1936-086X}},
language = {{eng}},
number = {{7}},
pages = {{6978--6984}},
publisher = {{The American Chemical Society (ACS)}},
series = {{ACS Nano}},
title = {{Fast Strain Mapping of Nanowire Light-Emitting Diodes Using Nanofocused X-ray Beams.}},
url = {{http://dx.doi.org/10.1021/acsnano.5b01291}},
doi = {{10.1021/acsnano.5b01291}},
volume = {{9}},
year = {{2015}},
}