Intrinsic Performance of InAs Nanowire Capacitors
Jansson, Kristofer LU ; Lind, Erik LU
and Wernersson, Lars-Erik
LU
(2014)
In IEEE Transactions on Electron Devices
61(2).
p.452-459
- Abstract
- The intrinsic properties of vertical InAs nanowire (NW) capacitors are investigated. The band structure is simulated using a Schrödinger-Poisson solver, taking the conduction band nonparabolicity into account. This is combined with a distributed RC model to simulate the current-voltage characteristics. It is found that the influence from the nonparabolicity is substantial for devices with a small nanowire diameter, resulting in an increased carrier concentration, a shift in the threshold voltage, and a higher intrinsic capacitance. These NW capacitors may be a suitable alternative in high frequency applications approaching 100 GHz, while maintaining a quality factor above 100.
Please use this url to cite or link to this publication:
https://lup.lub.lu.se/record/7760982
- author
- Jansson, Kristofer
LU
; Lind, Erik
LU
and Wernersson, Lars-Erik
LU
- organization
- publishing date
- 2014
- type
- Contribution to journal
- publication status
- published
- subject
- keywords
- nanowires (NWs), modeling, Capacitor, InAs
- in
- IEEE Transactions on Electron Devices
- volume
- 61
- issue
- 2
- pages
- 452 - 459
- publisher
- IEEE - Institute of Electrical and Electronics Engineers Inc.
- external identifiers
-
- scopus:84893762092
- wos:000330620600030
- ISSN
- 0018-9383
- DOI
- 10.1109/TED.2013.2293456
- project
- EIT_WWW Wireless with Wires
- language
- English
- LU publication?
- yes
- id
- 5659cee8-eaf3-4a31-a448-b0c10b880b55 (old id 7760982)
- date added to LUP
- 2016-04-01 13:57:35
- date last changed
- 2024-07-03 21:44:09
@article{5659cee8-eaf3-4a31-a448-b0c10b880b55,
abstract = {{The intrinsic properties of vertical InAs nanowire (NW) capacitors are investigated. The band structure is simulated using a Schrödinger-Poisson solver, taking the conduction band nonparabolicity into account. This is combined with a distributed RC model to simulate the current-voltage characteristics. It is found that the influence from the nonparabolicity is substantial for devices with a small nanowire diameter, resulting in an increased carrier concentration, a shift in the threshold voltage, and a higher intrinsic capacitance. These NW capacitors may be a suitable alternative in high frequency applications approaching 100 GHz, while maintaining a quality factor above 100.}},
author = {{Jansson, Kristofer and Lind, Erik and Wernersson, Lars-Erik}},
issn = {{0018-9383}},
keywords = {{nanowires (NWs); modeling; Capacitor; InAs}},
language = {{eng}},
number = {{2}},
pages = {{452--459}},
publisher = {{IEEE - Institute of Electrical and Electronics Engineers Inc.}},
series = {{IEEE Transactions on Electron Devices}},
title = {{Intrinsic Performance of InAs Nanowire Capacitors}},
url = {{http://dx.doi.org/10.1109/TED.2013.2293456}},
doi = {{10.1109/TED.2013.2293456}},
volume = {{61}},
year = {{2014}},
}