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Intrinsic Performance of InAs Nanowire Capacitors

Jansson, Kristofer LU ; Lind, Erik LU and Wernersson, Lars-Erik LU (2014) In IEEE Transactions on Electron Devices 61(2). p.452-459
Abstract
The intrinsic properties of vertical InAs nanowire (NW) capacitors are investigated. The band structure is simulated using a Schrödinger-Poisson solver, taking the conduction band nonparabolicity into account. This is combined with a distributed RC model to simulate the current-voltage characteristics. It is found that the influence from the nonparabolicity is substantial for devices with a small nanowire diameter, resulting in an increased carrier concentration, a shift in the threshold voltage, and a higher intrinsic capacitance. These NW capacitors may be a suitable alternative in high frequency applications approaching 100 GHz, while maintaining a quality factor above 100.
Please use this url to cite or link to this publication:
author
organization
publishing date
type
Contribution to journal
publication status
published
subject
keywords
nanowires (NWs), modeling, Capacitor, InAs
in
IEEE Transactions on Electron Devices
volume
61
issue
2
pages
452 - 459
publisher
IEEE--Institute of Electrical and Electronics Engineers Inc.
external identifiers
  • scopus:84893762092
ISSN
0018-9383
DOI
10.1109/TED.2013.2293456
project
EIT_WWW Wireless with Wires
language
English
LU publication?
yes
id
5659cee8-eaf3-4a31-a448-b0c10b880b55 (old id 7760982)
date added to LUP
2015-08-13 10:07:48
date last changed
2017-09-24 04:02:34
@article{5659cee8-eaf3-4a31-a448-b0c10b880b55,
  abstract     = {The intrinsic properties of vertical InAs nanowire (NW) capacitors are investigated. The band structure is simulated using a Schrödinger-Poisson solver, taking the conduction band nonparabolicity into account. This is combined with a distributed RC model to simulate the current-voltage characteristics. It is found that the influence from the nonparabolicity is substantial for devices with a small nanowire diameter, resulting in an increased carrier concentration, a shift in the threshold voltage, and a higher intrinsic capacitance. These NW capacitors may be a suitable alternative in high frequency applications approaching 100 GHz, while maintaining a quality factor above 100.},
  author       = {Jansson, Kristofer and Lind, Erik and Wernersson, Lars-Erik},
  issn         = {0018-9383},
  keyword      = {nanowires (NWs),modeling,Capacitor,InAs},
  language     = {eng},
  number       = {2},
  pages        = {452--459},
  publisher    = {IEEE--Institute of Electrical and Electronics Engineers Inc.},
  series       = {IEEE Transactions on Electron Devices},
  title        = {Intrinsic Performance of InAs Nanowire Capacitors},
  url          = {http://dx.doi.org/10.1109/TED.2013.2293456},
  volume       = {61},
  year         = {2014},
}