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Electrical and Surface Properties of InAs/InSb Nanowires Cleaned by Atomic Hydrogen

Webb, James LU ; Knutsson, Johan LU ; Hjort, Martin LU ; Gorji, Sepideh LU ; Dick Thelander, Kimberly LU ; Timm, Rainer LU and Mikkelsen, Anders LU (2015) In Nano Letters 15(8). p.4865-4875
Abstract
We present a study of InAs/InSb heterostructured nanowires by X-ray photoemission spectroscopy (XPS), scanning tunneling microscopy (STM), and in-vacuum electrical measurements. Starting with pristine nanowires covered only by the native oxide formed through exposure to ambient air, we investigate the effect of atomic hydrogen cleaning on the surface chemistry and electrical performance. We find that clean and unreconstructed nanowire surfaces can be obtained simultaneously for both InSb and InAs by heating to 380 +/- 20 degrees C under an H-2 pressure 2 X 10(-6) mbar. Through electrical measurement of individual nanowires, we observe an increase in conductivity of 2 orders of magnitude by atomic hydrogen cleaning, which we relate through... (More)
We present a study of InAs/InSb heterostructured nanowires by X-ray photoemission spectroscopy (XPS), scanning tunneling microscopy (STM), and in-vacuum electrical measurements. Starting with pristine nanowires covered only by the native oxide formed through exposure to ambient air, we investigate the effect of atomic hydrogen cleaning on the surface chemistry and electrical performance. We find that clean and unreconstructed nanowire surfaces can be obtained simultaneously for both InSb and InAs by heating to 380 +/- 20 degrees C under an H-2 pressure 2 X 10(-6) mbar. Through electrical measurement of individual nanowires, we observe an increase in conductivity of 2 orders of magnitude by atomic hydrogen cleaning, which we relate through theoretical simulation to the contact-nanowire junction and nanowire surface Fermi level pinning. Our study demonstrates the significant potential of atomic hydrogen cleaning regarding device fabrication when high quality contacts or complete control of the surface structure is required. As hydrogen cleaning has recently been shown to work for many different types of III-V nano-wires, our findings should be applicable far beyond the present materials system. (Less)
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author
organization
publishing date
type
Contribution to journal
publication status
published
subject
keywords
heterostructure, III-V, InAs, InSb, STM, nanowire
in
Nano Letters
volume
15
issue
8
pages
4865 - 4875
publisher
The American Chemical Society
external identifiers
  • wos:000359613700005
  • scopus:84939241086
ISSN
1530-6992
DOI
10.1021/acs.nanolett.5b00282
language
English
LU publication?
yes
id
f61b7865-359c-47e3-aefa-104332f3e689 (old id 7972320)
date added to LUP
2015-09-23 12:16:29
date last changed
2017-11-19 03:58:08
@article{f61b7865-359c-47e3-aefa-104332f3e689,
  abstract     = {We present a study of InAs/InSb heterostructured nanowires by X-ray photoemission spectroscopy (XPS), scanning tunneling microscopy (STM), and in-vacuum electrical measurements. Starting with pristine nanowires covered only by the native oxide formed through exposure to ambient air, we investigate the effect of atomic hydrogen cleaning on the surface chemistry and electrical performance. We find that clean and unreconstructed nanowire surfaces can be obtained simultaneously for both InSb and InAs by heating to 380 +/- 20 degrees C under an H-2 pressure 2 X 10(-6) mbar. Through electrical measurement of individual nanowires, we observe an increase in conductivity of 2 orders of magnitude by atomic hydrogen cleaning, which we relate through theoretical simulation to the contact-nanowire junction and nanowire surface Fermi level pinning. Our study demonstrates the significant potential of atomic hydrogen cleaning regarding device fabrication when high quality contacts or complete control of the surface structure is required. As hydrogen cleaning has recently been shown to work for many different types of III-V nano-wires, our findings should be applicable far beyond the present materials system.},
  author       = {Webb, James and Knutsson, Johan and Hjort, Martin and Gorji, Sepideh and Dick Thelander, Kimberly and Timm, Rainer and Mikkelsen, Anders},
  issn         = {1530-6992},
  keyword      = {heterostructure,III-V,InAs,InSb,STM,nanowire},
  language     = {eng},
  number       = {8},
  pages        = {4865--4875},
  publisher    = {The American Chemical Society},
  series       = {Nano Letters},
  title        = {Electrical and Surface Properties of InAs/InSb Nanowires Cleaned by Atomic Hydrogen},
  url          = {http://dx.doi.org/10.1021/acs.nanolett.5b00282},
  volume       = {15},
  year         = {2015},
}