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Strain mapping in an InGaN/GaN nanowire using a nano-focused x-ray beam

Stankevic, Tomas; Dzhigaev, Dmitry; Bi, Zhaoxia LU ; Rose, Max; Shabalin, Anatoly; Reinhardt, Juliane; Mikkelsen, Anders LU ; Samuelson, Lars LU ; Falkenberg, Gerald and Vartanyants, Ivan A., et al. (2015) In Applied Physics Letters 107(10).
Abstract
Strained InGaN/GaN core-shell nanowires (NWs) are promising candidates for solid state lighting applications due to their superior properties compared to planar films. NW based devices consist of multiple functional layers, which sum up to many hundred nanometers in thickness, that can uniquely be accessed in a non-destructive fashion by hard X-rays. Here, we present a detailed nanoscale strain mapping performed on a single, 400 nm thick and 2 lm long core-shell InGaN/GaN nanowire with an x-ray beam focused down to 100 nm. We observe an inhomogeneous strain distribution caused by the asymmetric strain relaxation in the shell. One side of the InGaN shell was fully strained, whereas the other side and the top part were relaxed. Additionally,... (More)
Strained InGaN/GaN core-shell nanowires (NWs) are promising candidates for solid state lighting applications due to their superior properties compared to planar films. NW based devices consist of multiple functional layers, which sum up to many hundred nanometers in thickness, that can uniquely be accessed in a non-destructive fashion by hard X-rays. Here, we present a detailed nanoscale strain mapping performed on a single, 400 nm thick and 2 lm long core-shell InGaN/GaN nanowire with an x-ray beam focused down to 100 nm. We observe an inhomogeneous strain distribution caused by the asymmetric strain relaxation in the shell. One side of the InGaN shell was fully strained, whereas the other side and the top part were relaxed. Additionally, tilt and strain gradients were determined at the interface with the substrate. (C) 2015 AIP Publishing LLC. (Less)
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Applied Physics Letters
volume
107
issue
10
publisher
American Institute of Physics
external identifiers
  • wos:000361640200036
  • scopus:84941118455
ISSN
0003-6951
DOI
10.1063/1.4929942
language
English
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yes
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a86a1861-e548-43c7-a9e0-a72ed30f1cfa (old id 8070889)
date added to LUP
2015-10-22 07:44:29
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2017-09-10 03:09:12
@article{a86a1861-e548-43c7-a9e0-a72ed30f1cfa,
  abstract     = {Strained InGaN/GaN core-shell nanowires (NWs) are promising candidates for solid state lighting applications due to their superior properties compared to planar films. NW based devices consist of multiple functional layers, which sum up to many hundred nanometers in thickness, that can uniquely be accessed in a non-destructive fashion by hard X-rays. Here, we present a detailed nanoscale strain mapping performed on a single, 400 nm thick and 2 lm long core-shell InGaN/GaN nanowire with an x-ray beam focused down to 100 nm. We observe an inhomogeneous strain distribution caused by the asymmetric strain relaxation in the shell. One side of the InGaN shell was fully strained, whereas the other side and the top part were relaxed. Additionally, tilt and strain gradients were determined at the interface with the substrate. (C) 2015 AIP Publishing LLC.},
  articleno    = {103101},
  author       = {Stankevic, Tomas and Dzhigaev, Dmitry and Bi, Zhaoxia and Rose, Max and Shabalin, Anatoly and Reinhardt, Juliane and Mikkelsen, Anders and Samuelson, Lars and Falkenberg, Gerald and Vartanyants, Ivan A. and Feidenhans'l, Robert},
  issn         = {0003-6951},
  language     = {eng},
  number       = {10},
  publisher    = {American Institute of Physics},
  series       = {Applied Physics Letters},
  title        = {Strain mapping in an InGaN/GaN nanowire using a nano-focused x-ray beam},
  url          = {http://dx.doi.org/10.1063/1.4929942},
  volume       = {107},
  year         = {2015},
}