Frequency Modulation in mm-Wave InGaAs MOSFET/RTD Wavelet Generators
(2013) 25th International Conference on Indium Phosphide and Related Materials (IPRM) p.1-2- Abstract
- Co-integration of an InGaAs MOSFET and an RTD is performed to realize a wavelet generator. The large transconductance of the MOSFET (1.9 mS/mu m) is used to switch the current in an oscillator circuit and coherent wavelets down to 41 ps are generated in the frequency domain of 50 to 100 GHz. The lowest power consumption measured is 1.9 pJ/pulse. It is found that the supply bias can be used to modulate the center frequency of the wavelets.
Please use this url to cite or link to this publication:
https://lup.lub.lu.se/record/4204150
- author
- Egard, Mikael LU ; Ärlelid, Mats LU ; Ohlsson, Lars LU ; Borg, Mattias LU ; Lind, Erik LU and Wernersson, Lars-Erik LU
- organization
- publishing date
- 2013
- type
- Chapter in Book/Report/Conference proceeding
- publication status
- published
- subject
- keywords
- InGaAS MOSFET, RTD, wavelet generator, mm-Wave circuits
- host publication
- 2013 International Conference on Indium Phosphide and Related Materials (IPRM)
- pages
- 1 - 2
- publisher
- IEEE - Institute of Electrical and Electronics Engineers Inc.
- conference name
- 25th International Conference on Indium Phosphide and Related Materials (IPRM)
- conference location
- Kobe, Japan
- conference dates
- 2013-05-19 - 2013-05-23
- external identifiers
-
- wos:000326658100084
- scopus:84882326963
- ISSN
- 1092-8669
- DOI
- 10.1109/ICIPRM.2013.6562644
- language
- English
- LU publication?
- yes
- id
- 814b3446-9a3f-47ce-a940-2282e707d01c (old id 4204150)
- date added to LUP
- 2016-04-01 13:21:00
- date last changed
- 2024-01-09 12:16:10
@inproceedings{814b3446-9a3f-47ce-a940-2282e707d01c, abstract = {{Co-integration of an InGaAs MOSFET and an RTD is performed to realize a wavelet generator. The large transconductance of the MOSFET (1.9 mS/mu m) is used to switch the current in an oscillator circuit and coherent wavelets down to 41 ps are generated in the frequency domain of 50 to 100 GHz. The lowest power consumption measured is 1.9 pJ/pulse. It is found that the supply bias can be used to modulate the center frequency of the wavelets.}}, author = {{Egard, Mikael and Ärlelid, Mats and Ohlsson, Lars and Borg, Mattias and Lind, Erik and Wernersson, Lars-Erik}}, booktitle = {{2013 International Conference on Indium Phosphide and Related Materials (IPRM)}}, issn = {{1092-8669}}, keywords = {{InGaAS MOSFET; RTD; wavelet generator; mm-Wave circuits}}, language = {{eng}}, pages = {{1--2}}, publisher = {{IEEE - Institute of Electrical and Electronics Engineers Inc.}}, title = {{Frequency Modulation in mm-Wave InGaAs MOSFET/RTD Wavelet Generators}}, url = {{http://dx.doi.org/10.1109/ICIPRM.2013.6562644}}, doi = {{10.1109/ICIPRM.2013.6562644}}, year = {{2013}}, }