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Frequency Modulation in mm-Wave InGaAs MOSFET/RTD Wavelet Generators

Egard, Mikael LU ; Ärlelid, Mats LU ; Ohlsson, Lars LU orcid ; Borg, Mattias LU orcid ; Lind, Erik LU and Wernersson, Lars-Erik LU (2013) 25th International Conference on Indium Phosphide and Related Materials (IPRM) p.1-2
Abstract
Co-integration of an InGaAs MOSFET and an RTD is performed to realize a wavelet generator. The large transconductance of the MOSFET (1.9 mS/mu m) is used to switch the current in an oscillator circuit and coherent wavelets down to 41 ps are generated in the frequency domain of 50 to 100 GHz. The lowest power consumption measured is 1.9 pJ/pulse. It is found that the supply bias can be used to modulate the center frequency of the wavelets.
Please use this url to cite or link to this publication:
author
; ; ; ; and
organization
publishing date
type
Chapter in Book/Report/Conference proceeding
publication status
published
subject
keywords
InGaAS MOSFET, RTD, wavelet generator, mm-Wave circuits
host publication
2013 International Conference on Indium Phosphide and Related Materials (IPRM)
pages
1 - 2
publisher
IEEE - Institute of Electrical and Electronics Engineers Inc.
conference name
25th International Conference on Indium Phosphide and Related Materials (IPRM)
conference location
Kobe, Japan
conference dates
2013-05-19 - 2013-05-23
external identifiers
  • wos:000326658100084
  • scopus:84882326963
ISSN
1092-8669
DOI
10.1109/ICIPRM.2013.6562644
language
English
LU publication?
yes
id
814b3446-9a3f-47ce-a940-2282e707d01c (old id 4204150)
date added to LUP
2016-04-01 13:21:00
date last changed
2023-09-02 22:33:06
@inproceedings{814b3446-9a3f-47ce-a940-2282e707d01c,
  abstract     = {{Co-integration of an InGaAs MOSFET and an RTD is performed to realize a wavelet generator. The large transconductance of the MOSFET (1.9 mS/mu m) is used to switch the current in an oscillator circuit and coherent wavelets down to 41 ps are generated in the frequency domain of 50 to 100 GHz. The lowest power consumption measured is 1.9 pJ/pulse. It is found that the supply bias can be used to modulate the center frequency of the wavelets.}},
  author       = {{Egard, Mikael and Ärlelid, Mats and Ohlsson, Lars and Borg, Mattias and Lind, Erik and Wernersson, Lars-Erik}},
  booktitle    = {{2013 International Conference on Indium Phosphide and Related Materials (IPRM)}},
  issn         = {{1092-8669}},
  keywords     = {{InGaAS MOSFET; RTD; wavelet generator; mm-Wave circuits}},
  language     = {{eng}},
  pages        = {{1--2}},
  publisher    = {{IEEE - Institute of Electrical and Electronics Engineers Inc.}},
  title        = {{Frequency Modulation in mm-Wave InGaAs MOSFET/RTD Wavelet Generators}},
  url          = {{http://dx.doi.org/10.1109/ICIPRM.2013.6562644}},
  doi          = {{10.1109/ICIPRM.2013.6562644}},
  year         = {{2013}},
}