III-V nanowires for logics and beyond
(2015) In Microelectronic Engineering 147. p.344-348- Abstract
- III-V MOSFETs are currently being considered for digital applications, whereas the option to develop the technology for RF-applications is less often discussed. The quality of the semiconductor/high-k interface and the presence of border traps within the high-k film plays an important role in both types of transistors, but given the different sets of transistor metrics, their influence is different although correlated. The high-k technology developed for digital transistors will be applicable also to RE-transistors, while special attention needs to be given the frequency dispersion of the transconductance and the low-frequency noise. Following the natural transistor evolution, III-V nanowires need to be used to maintain electrostatic... (More)
- III-V MOSFETs are currently being considered for digital applications, whereas the option to develop the technology for RF-applications is less often discussed. The quality of the semiconductor/high-k interface and the presence of border traps within the high-k film plays an important role in both types of transistors, but given the different sets of transistor metrics, their influence is different although correlated. The high-k technology developed for digital transistors will be applicable also to RE-transistors, while special attention needs to be given the frequency dispersion of the transconductance and the low-frequency noise. Following the natural transistor evolution, III-V nanowires need to be used to maintain electrostatic control at scaled gate lengths. Finally, examples of heterostructure design and circuit implementation are given describing status in the field. (C) 2015 Elsevier B.V. All rights reserved. (Less)
Please use this url to cite or link to this publication:
https://lup.lub.lu.se/record/8206451
- author
- Wernersson, Lars-Erik LU
- organization
- publishing date
- 2015
- type
- Contribution to journal
- publication status
- published
- subject
- keywords
- III-V MOSFETs, Nanowires, In GaAs, InAs
- in
- Microelectronic Engineering
- volume
- 147
- pages
- 344 - 348
- publisher
- Elsevier
- external identifiers
-
- wos:000362308000082
- scopus:84929990073
- ISSN
- 1873-5568
- DOI
- 10.1016/j.mee.2015.04.122
- language
- English
- LU publication?
- yes
- id
- c37076fc-5a13-4c52-bb82-bf32ad3ff35b (old id 8206451)
- date added to LUP
- 2016-04-01 10:09:27
- date last changed
- 2023-10-11 20:09:42
@article{c37076fc-5a13-4c52-bb82-bf32ad3ff35b,
abstract = {{III-V MOSFETs are currently being considered for digital applications, whereas the option to develop the technology for RF-applications is less often discussed. The quality of the semiconductor/high-k interface and the presence of border traps within the high-k film plays an important role in both types of transistors, but given the different sets of transistor metrics, their influence is different although correlated. The high-k technology developed for digital transistors will be applicable also to RE-transistors, while special attention needs to be given the frequency dispersion of the transconductance and the low-frequency noise. Following the natural transistor evolution, III-V nanowires need to be used to maintain electrostatic control at scaled gate lengths. Finally, examples of heterostructure design and circuit implementation are given describing status in the field. (C) 2015 Elsevier B.V. All rights reserved.}},
author = {{Wernersson, Lars-Erik}},
issn = {{1873-5568}},
keywords = {{III-V MOSFETs; Nanowires; In GaAs; InAs}},
language = {{eng}},
pages = {{344--348}},
publisher = {{Elsevier}},
series = {{Microelectronic Engineering}},
title = {{III-V nanowires for logics and beyond}},
url = {{http://dx.doi.org/10.1016/j.mee.2015.04.122}},
doi = {{10.1016/j.mee.2015.04.122}},
volume = {{147}},
year = {{2015}},
}