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Quantized Conduction and High Mobility in Selectively Grown InxGa1-xAs Nanowires

Zota, Cezar LU ; Lindgren, David LU ; Wernersson, Lars-Erik LU and Lind, Erik LU (2015) In ACS Nano 9(10). p.9892-9897
Abstract
We report measured quantized conductance and quasi-ballistic transport in selectively regrown In0.85Ga0.15As nanowires. Very low parasitic resistances obtained by regrowth techniques allow us to probe the near-intrinsic electrical properties, and we observe several quantized conductance steps at 10 K. We extract a mean free path of 180 +/- 40 nm and an effective electron mobility of 3300 +/- 300 cm(2)/V.s, both at room temperature, which are among the largest reported values for nanowires of similar dimensions. In addition, optical characterization of the nanowires by photoluminescence and Raman measurement is performed. We find an unintentional increase of indium in the InxGa1-xAs composition relative to the regrown film layer, as well as... (More)
We report measured quantized conductance and quasi-ballistic transport in selectively regrown In0.85Ga0.15As nanowires. Very low parasitic resistances obtained by regrowth techniques allow us to probe the near-intrinsic electrical properties, and we observe several quantized conductance steps at 10 K. We extract a mean free path of 180 +/- 40 nm and an effective electron mobility of 3300 +/- 300 cm(2)/V.s, both at room temperature, which are among the largest reported values for nanowires of similar dimensions. In addition, optical characterization of the nanowires by photoluminescence and Raman measurement is performed. We find an unintentional increase of indium in the InxGa1-xAs composition relative to the regrown film layer, as well as partial strain relaxation. (Less)
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author
organization
publishing date
type
Contribution to journal
publication status
published
subject
keywords
Raman, photoluminescence, selective regrowth, ballistic transport, InGaAs, mobility, electric transport, nanowire, field-effect transistors
in
ACS Nano
volume
9
issue
10
pages
9892 - 9897
publisher
The American Chemical Society
external identifiers
  • wos:000363915300045
  • scopus:84945925224
ISSN
1936-086X
DOI
10.1021/acsnano.5b03318
language
English
LU publication?
yes
id
0873b446-9cbb-40df-812e-79a045ef5554 (old id 8395157)
date added to LUP
2015-12-21 10:01:24
date last changed
2017-05-28 03:20:24
@article{0873b446-9cbb-40df-812e-79a045ef5554,
  abstract     = {We report measured quantized conductance and quasi-ballistic transport in selectively regrown In0.85Ga0.15As nanowires. Very low parasitic resistances obtained by regrowth techniques allow us to probe the near-intrinsic electrical properties, and we observe several quantized conductance steps at 10 K. We extract a mean free path of 180 +/- 40 nm and an effective electron mobility of 3300 +/- 300 cm(2)/V.s, both at room temperature, which are among the largest reported values for nanowires of similar dimensions. In addition, optical characterization of the nanowires by photoluminescence and Raman measurement is performed. We find an unintentional increase of indium in the InxGa1-xAs composition relative to the regrown film layer, as well as partial strain relaxation.},
  author       = {Zota, Cezar and Lindgren, David and Wernersson, Lars-Erik and Lind, Erik},
  issn         = {1936-086X},
  keyword      = {Raman,photoluminescence,selective regrowth,ballistic transport,InGaAs,mobility,electric transport,nanowire,field-effect transistors},
  language     = {eng},
  number       = {10},
  pages        = {9892--9897},
  publisher    = {The American Chemical Society},
  series       = {ACS Nano},
  title        = {Quantized Conduction and High Mobility in Selectively Grown InxGa1-xAs Nanowires},
  url          = {http://dx.doi.org/10.1021/acsnano.5b03318},
  volume       = {9},
  year         = {2015},
}