Quantized Conduction and High Mobility in Selectively Grown InxGa1-xAs Nanowires
(2015) In ACS Nano 9(10). p.9892-9897- Abstract
- We report measured quantized conductance and quasi-ballistic transport in selectively regrown In0.85Ga0.15As nanowires. Very low parasitic resistances obtained by regrowth techniques allow us to probe the near-intrinsic electrical properties, and we observe several quantized conductance steps at 10 K. We extract a mean free path of 180 +/- 40 nm and an effective electron mobility of 3300 +/- 300 cm(2)/V.s, both at room temperature, which are among the largest reported values for nanowires of similar dimensions. In addition, optical characterization of the nanowires by photoluminescence and Raman measurement is performed. We find an unintentional increase of indium in the InxGa1-xAs composition relative to the regrown film layer, as well as... (More)
- We report measured quantized conductance and quasi-ballistic transport in selectively regrown In0.85Ga0.15As nanowires. Very low parasitic resistances obtained by regrowth techniques allow us to probe the near-intrinsic electrical properties, and we observe several quantized conductance steps at 10 K. We extract a mean free path of 180 +/- 40 nm and an effective electron mobility of 3300 +/- 300 cm(2)/V.s, both at room temperature, which are among the largest reported values for nanowires of similar dimensions. In addition, optical characterization of the nanowires by photoluminescence and Raman measurement is performed. We find an unintentional increase of indium in the InxGa1-xAs composition relative to the regrown film layer, as well as partial strain relaxation. (Less)
Please use this url to cite or link to this publication:
https://lup.lub.lu.se/record/8395157
- author
- Zota, Cezar LU ; Lindgren, David LU ; Wernersson, Lars-Erik LU and Lind, Erik LU
- organization
- publishing date
- 2015
- type
- Contribution to journal
- publication status
- published
- subject
- keywords
- Raman, photoluminescence, selective regrowth, ballistic transport, InGaAs, mobility, electric transport, nanowire, field-effect transistors
- in
- ACS Nano
- volume
- 9
- issue
- 10
- pages
- 9892 - 9897
- publisher
- The American Chemical Society (ACS)
- external identifiers
-
- wos:000363915300045
- scopus:84945925224
- pmid:26387961
- ISSN
- 1936-086X
- DOI
- 10.1021/acsnano.5b03318
- language
- English
- LU publication?
- yes
- id
- 0873b446-9cbb-40df-812e-79a045ef5554 (old id 8395157)
- date added to LUP
- 2016-04-01 10:52:32
- date last changed
- 2023-10-26 21:27:53
@article{0873b446-9cbb-40df-812e-79a045ef5554,
abstract = {{We report measured quantized conductance and quasi-ballistic transport in selectively regrown In0.85Ga0.15As nanowires. Very low parasitic resistances obtained by regrowth techniques allow us to probe the near-intrinsic electrical properties, and we observe several quantized conductance steps at 10 K. We extract a mean free path of 180 +/- 40 nm and an effective electron mobility of 3300 +/- 300 cm(2)/V.s, both at room temperature, which are among the largest reported values for nanowires of similar dimensions. In addition, optical characterization of the nanowires by photoluminescence and Raman measurement is performed. We find an unintentional increase of indium in the InxGa1-xAs composition relative to the regrown film layer, as well as partial strain relaxation.}},
author = {{Zota, Cezar and Lindgren, David and Wernersson, Lars-Erik and Lind, Erik}},
issn = {{1936-086X}},
keywords = {{Raman; photoluminescence; selective regrowth; ballistic transport; InGaAs; mobility; electric transport; nanowire; field-effect transistors}},
language = {{eng}},
number = {{10}},
pages = {{9892--9897}},
publisher = {{The American Chemical Society (ACS)}},
series = {{ACS Nano}},
title = {{Quantized Conduction and High Mobility in Selectively Grown InxGa1-xAs Nanowires}},
url = {{http://dx.doi.org/10.1021/acsnano.5b03318}},
doi = {{10.1021/acsnano.5b03318}},
volume = {{9}},
year = {{2015}},
}