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Recombination dynamics in aerotaxy-grown Zn-doped GaAs nanowires

Zhang, Wei LU ; Yang, Fangfang LU ; Messing, Maria E. LU ; Mergenthaler, Kilian LU ; Pistol, Mats Erik LU ; Deppert, Knut LU ; Samuelson, Lars LU ; Magnusson, Martin H. LU and Yartsev, Arkady LU (2016) In Nanotechnology 27(45).
Abstract

In this paper we have investigated the dynamics of photo-generated charge carriers in a series of aerotaxy-grown GaAs nanowires (NWs) with different levels of Zn doping. Time-resolved photo-induced luminescence and transient absorption have been employed to investigate radiative (band edge transition) and non-radiative charge recombination processes, respectively. We find that the photo-luminescence (PL) lifetime of intrinsic GaAs NWs is significantly increased after growing an AlGaAs shell over them, indicating that an AlGaAs shell can effectively passivate the surface of aerotaxy-grown GaAs NWs. We observe that PL decay time as well as PL intensity decrease with increasing Zn doping, which can be attributed to thermally activated... (More)

In this paper we have investigated the dynamics of photo-generated charge carriers in a series of aerotaxy-grown GaAs nanowires (NWs) with different levels of Zn doping. Time-resolved photo-induced luminescence and transient absorption have been employed to investigate radiative (band edge transition) and non-radiative charge recombination processes, respectively. We find that the photo-luminescence (PL) lifetime of intrinsic GaAs NWs is significantly increased after growing an AlGaAs shell over them, indicating that an AlGaAs shell can effectively passivate the surface of aerotaxy-grown GaAs NWs. We observe that PL decay time as well as PL intensity decrease with increasing Zn doping, which can be attributed to thermally activated electron trapping with the trap density increased due to the Zn doping level.

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author
organization
publishing date
type
Contribution to journal
publication status
published
subject
in
Nanotechnology
volume
27
issue
45
publisher
IOP Publishing
external identifiers
  • scopus:84991666689
  • wos:000386042100001
ISSN
0957-4484
DOI
10.1088/0957-4484/27/45/455704
language
English
LU publication?
yes
id
848a10db-c1ec-4301-a0c5-801b8fefa88b
date added to LUP
2016-11-16 08:04:59
date last changed
2017-08-20 05:04:17
@article{848a10db-c1ec-4301-a0c5-801b8fefa88b,
  abstract     = {<p>In this paper we have investigated the dynamics of photo-generated charge carriers in a series of aerotaxy-grown GaAs nanowires (NWs) with different levels of Zn doping. Time-resolved photo-induced luminescence and transient absorption have been employed to investigate radiative (band edge transition) and non-radiative charge recombination processes, respectively. We find that the photo-luminescence (PL) lifetime of intrinsic GaAs NWs is significantly increased after growing an AlGaAs shell over them, indicating that an AlGaAs shell can effectively passivate the surface of aerotaxy-grown GaAs NWs. We observe that PL decay time as well as PL intensity decrease with increasing Zn doping, which can be attributed to thermally activated electron trapping with the trap density increased due to the Zn doping level.</p>},
  articleno    = {455704},
  author       = {Zhang, Wei and Yang, Fangfang and Messing, Maria E. and Mergenthaler, Kilian and Pistol, Mats Erik and Deppert, Knut and Samuelson, Lars and Magnusson, Martin H. and Yartsev, Arkady},
  issn         = {0957-4484},
  language     = {eng},
  month        = {10},
  number       = {45},
  publisher    = {IOP Publishing},
  series       = {Nanotechnology},
  title        = {Recombination dynamics in aerotaxy-grown Zn-doped GaAs nanowires},
  url          = {http://dx.doi.org/10.1088/0957-4484/27/45/455704},
  volume       = {27},
  year         = {2016},
}