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Detection of Single Charge Trapping Defects in Semiconductor Particles by Evaluating Photon Antibunching in Delayed Photoluminescence

Eremchev, Ivan Yu ; Tarasevich, Aleksandr O. ; Kniazeva, Maria A. ; Li, Jun LU orcid ; Naumov, Andrei V. and Scheblykin, Ivan G. LU orcid (2023) In Nano Letters
Abstract

Time-resolved analysis of photon cross-correlation function g(2)(τ) is applied to photoluminescence (PL) of individual submicrometer size MAPbI3 perovskite crystals. Surprisingly, an antibunching effect in the long-living tail of PL is observed, while the prompt PL obeys the photon statistics typical for a classical emitter. We propose that antibunched photons from the PL decay tail originate from radiative recombination of detrapped charge carriers which were initially captured by a very limited number (down to one) of shallow defect states. The concentration of these trapping sites is estimated to be in the range 1013-1016 cm-3. In principle, photon correlations can be also caused... (More)

Time-resolved analysis of photon cross-correlation function g(2)(τ) is applied to photoluminescence (PL) of individual submicrometer size MAPbI3 perovskite crystals. Surprisingly, an antibunching effect in the long-living tail of PL is observed, while the prompt PL obeys the photon statistics typical for a classical emitter. We propose that antibunched photons from the PL decay tail originate from radiative recombination of detrapped charge carriers which were initially captured by a very limited number (down to one) of shallow defect states. The concentration of these trapping sites is estimated to be in the range 1013-1016 cm-3. In principle, photon correlations can be also caused by highly nonlinear Auger recombination processes; however, in our case it requires unrealistically large Auger recombination coefficients. The potential of the time-resolved g(2)(0) for unambiguous identification of charge rerecombination processes in semiconductors considering the actual number of charge carries and defects states per particle is demonstrated.

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organization
publishing date
type
Contribution to journal
publication status
published
subject
keywords
antibunching, Auger recombination, defect, delayed photoluminescence, single perovskite submicron crystals, single trap detection
in
Nano Letters
publisher
The American Chemical Society (ACS)
external identifiers
  • scopus:85149758959
  • pmid:36893363
ISSN
1530-6984
DOI
10.1021/acs.nanolett.2c04004
language
English
LU publication?
yes
id
85f69cba-2dee-4eda-af4e-482da4e8064a
date added to LUP
2023-04-04 11:18:01
date last changed
2024-06-27 16:58:57
@article{85f69cba-2dee-4eda-af4e-482da4e8064a,
  abstract     = {{<p>Time-resolved analysis of photon cross-correlation function g<sup>(2)</sup>(τ) is applied to photoluminescence (PL) of individual submicrometer size MAPbI<sub>3</sub> perovskite crystals. Surprisingly, an antibunching effect in the long-living tail of PL is observed, while the prompt PL obeys the photon statistics typical for a classical emitter. We propose that antibunched photons from the PL decay tail originate from radiative recombination of detrapped charge carriers which were initially captured by a very limited number (down to one) of shallow defect states. The concentration of these trapping sites is estimated to be in the range 10<sup>13</sup>-10<sup>16</sup> cm<sup>-3</sup>. In principle, photon correlations can be also caused by highly nonlinear Auger recombination processes; however, in our case it requires unrealistically large Auger recombination coefficients. The potential of the time-resolved g<sup>(2)</sup>(0) for unambiguous identification of charge rerecombination processes in semiconductors considering the actual number of charge carries and defects states per particle is demonstrated.</p>}},
  author       = {{Eremchev, Ivan Yu and Tarasevich, Aleksandr O. and Kniazeva, Maria A. and Li, Jun and Naumov, Andrei V. and Scheblykin, Ivan G.}},
  issn         = {{1530-6984}},
  keywords     = {{antibunching; Auger recombination; defect; delayed photoluminescence; single perovskite submicron crystals; single trap detection}},
  language     = {{eng}},
  publisher    = {{The American Chemical Society (ACS)}},
  series       = {{Nano Letters}},
  title        = {{Detection of Single Charge Trapping Defects in Semiconductor Particles by Evaluating Photon Antibunching in Delayed Photoluminescence}},
  url          = {{http://dx.doi.org/10.1021/acs.nanolett.2c04004}},
  doi          = {{10.1021/acs.nanolett.2c04004}},
  year         = {{2023}},
}