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Comparing Hall Effect and Field Effect Measurements on the Same Single Nanowire

Hultin, Olof LU ; Otnes, Gaute LU ; Borgström, Magnus LU ; Bjork, Mikael; Samuelson, Lars LU and Storm, Kristian LU (2016) In Nano Letters 16(1). p.205-211
Abstract
We compare and discuss the two most commonly used electrical characterization techniques for nanowires (NWs). In a novel single-NW device, we combine Hall effect and back-gated and top-gated field effect measurements and quantify the carrier concentrations in a series of sulfur-doped InP NWs. The carrier concentrations from Hall effect and field effect measurements are found to correlate well when using the analysis methods described in this work. This shows that NWs can be accurately characterized with available electrical methods, an important result toward better understanding of semiconductor NW doping.
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author
organization
publishing date
type
Contribution to journal
publication status
published
subject
keywords
Nanowire, doping, Hall effect, field effect, electrical characterization
in
Nano Letters
volume
16
issue
1
pages
205 - 211
publisher
The American Chemical Society
external identifiers
  • wos:000368322700033
  • scopus:84957538299
ISSN
1530-6992
DOI
10.1021/acs.nanolett.5b03496
language
English
LU publication?
yes
id
3524c188-4755-4594-af47-83a45c8824cc (old id 8748043)
date added to LUP
2016-02-23 09:40:15
date last changed
2017-07-02 03:55:10
@article{3524c188-4755-4594-af47-83a45c8824cc,
  abstract     = {We compare and discuss the two most commonly used electrical characterization techniques for nanowires (NWs). In a novel single-NW device, we combine Hall effect and back-gated and top-gated field effect measurements and quantify the carrier concentrations in a series of sulfur-doped InP NWs. The carrier concentrations from Hall effect and field effect measurements are found to correlate well when using the analysis methods described in this work. This shows that NWs can be accurately characterized with available electrical methods, an important result toward better understanding of semiconductor NW doping.},
  author       = {Hultin, Olof and Otnes, Gaute and Borgström, Magnus and Bjork, Mikael and Samuelson, Lars and Storm, Kristian},
  issn         = {1530-6992},
  keyword      = {Nanowire,doping,Hall effect,field effect,electrical characterization},
  language     = {eng},
  number       = {1},
  pages        = {205--211},
  publisher    = {The American Chemical Society},
  series       = {Nano Letters},
  title        = {Comparing Hall Effect and Field Effect Measurements on the Same Single Nanowire},
  url          = {http://dx.doi.org/10.1021/acs.nanolett.5b03496},
  volume       = {16},
  year         = {2016},
}