Growth and characterization of defect free GaAs nanowires
Wacaser, Brent LU ; Deppert, Knut LU
; Karlsson, Lisa
LU
; Samuelson, Lars
LU
and Seifert, Werner
LU
(2006)
In Journal of Crystal Growth
287(2).
p.504-508
- Abstract
- Most III-V compound semiconductor nanowires seeded by metal particles grow preferentially in a (over bar 1 over bar 1 over bar 1)B direction (B wires) and most commonly with many stacking faults perpendicular to the growth direction. If growth proceeds in an alternate direction, defect-free growth has been observed. We present experimental results for the growth of GaAs nanowires in a previously uninvestigated growth direction, a < 111 > A direction (A wires). One novelty is that a {111} A growth plane, like a {over bar 1 over bar 1 over bar 1} B, is a close packed plane where the stacking sequence can be interrupted forming stacking faults, but unlike the B wires the A wires lack stacking faults. It is also observed that, when grown... (More)
- Most III-V compound semiconductor nanowires seeded by metal particles grow preferentially in a (over bar 1 over bar 1 over bar 1)B direction (B wires) and most commonly with many stacking faults perpendicular to the growth direction. If growth proceeds in an alternate direction, defect-free growth has been observed. We present experimental results for the growth of GaAs nanowires in a previously uninvestigated growth direction, a < 111 > A direction (A wires). One novelty is that a {111} A growth plane, like a {over bar 1 over bar 1 over bar 1} B, is a close packed plane where the stacking sequence can be interrupted forming stacking faults, but unlike the B wires the A wires lack stacking faults. It is also observed that, when grown under equivalent conditions, the growth rate of the A wires is approximately twice that of the B wires. Additionally, B wires have a hexagonal cross section with three {11 over bar 2} and three {11 over bar 2} side facets. A wires, on the other hand, have only three major side facets which are of the {11 over bar 2} type, giving them a triangular cross section. (c) 2005 Elsevier B.V. All rights reserved. (Less)
Please use this url to cite or link to this publication:
https://lup.lub.lu.se/record/418147
- author
- Wacaser, Brent
LU
; Deppert, Knut
LU
; Karlsson, Lisa
LU
; Samuelson, Lars
LU
and Seifert, Werner
LU
- organization
- publishing date
- 2006
- type
- Contribution to journal
- publication status
- published
- subject
- keywords
- semiconducting III-V materials, epitaxy, organometallic vapor phase, nanostructures, defects, interfaces
- in
- Journal of Crystal Growth
- volume
- 287
- issue
- 2
- pages
- 504 - 508
- publisher
- Elsevier
- external identifiers
-
- wos:000235071600063
- scopus:30344485981
- ISSN
- 0022-0248
- DOI
- 10.1016/j.jcrysgro.2005.11.075
- language
- English
- LU publication?
- yes
- additional info
- The information about affiliations in this record was updated in December 2015. The record was previously connected to the following departments: Solid State Physics (011013006), Polymer and Materials Chemistry (LTH) (011001041)
- id
- 87c4a234-92ec-4e84-9fcd-2c5e7a3104e4 (old id 418147)
- date added to LUP
- 2016-04-01 16:44:30
- date last changed
- 2022-02-05 18:15:40
@article{87c4a234-92ec-4e84-9fcd-2c5e7a3104e4,
abstract = {{Most III-V compound semiconductor nanowires seeded by metal particles grow preferentially in a (over bar 1 over bar 1 over bar 1)B direction (B wires) and most commonly with many stacking faults perpendicular to the growth direction. If growth proceeds in an alternate direction, defect-free growth has been observed. We present experimental results for the growth of GaAs nanowires in a previously uninvestigated growth direction, a < 111 > A direction (A wires). One novelty is that a {111} A growth plane, like a {over bar 1 over bar 1 over bar 1} B, is a close packed plane where the stacking sequence can be interrupted forming stacking faults, but unlike the B wires the A wires lack stacking faults. It is also observed that, when grown under equivalent conditions, the growth rate of the A wires is approximately twice that of the B wires. Additionally, B wires have a hexagonal cross section with three {11 over bar 2} and three {11 over bar 2} side facets. A wires, on the other hand, have only three major side facets which are of the {11 over bar 2} type, giving them a triangular cross section. (c) 2005 Elsevier B.V. All rights reserved.}},
author = {{Wacaser, Brent and Deppert, Knut and Karlsson, Lisa and Samuelson, Lars and Seifert, Werner}},
issn = {{0022-0248}},
keywords = {{semiconducting III-V materials; epitaxy; organometallic vapor phase; nanostructures; defects; interfaces}},
language = {{eng}},
number = {{2}},
pages = {{504--508}},
publisher = {{Elsevier}},
series = {{Journal of Crystal Growth}},
title = {{Growth and characterization of defect free GaAs nanowires}},
url = {{http://dx.doi.org/10.1016/j.jcrysgro.2005.11.075}},
doi = {{10.1016/j.jcrysgro.2005.11.075}},
volume = {{287}},
year = {{2006}},
}