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InAs nanowire metal-oxide-semiconductor capacitors

Roddaro, Stefano LU ; Storm, Kristian LU ; Astromskas, Gvidas LU ; Samuelson, Lars LU ; Wernersson, Lars-Erik LU ; Karlström, Olov LU and Wacker, Andreas LU (2008) In Applied Physics Letters 92(25).
Abstract
We present a capacitance-voltage study for arrays of vertical InAs nanowires. Metal-oxide-semiconductor (MOS) capacitors are obtained by insulating the nanowires with a conformal 10 nm HfO2 layer and using a top Cr/Au metallization as one of the capacitor's electrodes. The described fabrication and characterization technique enables a systematic investigation of the carrier density in the nanowires as well as of the quality of the MOS interface.
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author
; ; ; ; ; and
organization
publishing date
type
Contribution to journal
publication status
published
subject
in
Applied Physics Letters
volume
92
issue
25
article number
253509
publisher
American Institute of Physics (AIP)
external identifiers
  • wos:000257231200089
  • scopus:46049100598
ISSN
0003-6951
DOI
10.1063/1.2949080
language
English
LU publication?
yes
id
88cf0ba3-2dd2-46ee-ae6a-d003e2ba1886 (old id 1172780)
date added to LUP
2016-04-01 12:11:42
date last changed
2020-03-11 02:48:52
@article{88cf0ba3-2dd2-46ee-ae6a-d003e2ba1886,
  abstract     = {We present a capacitance-voltage study for arrays of vertical InAs nanowires. Metal-oxide-semiconductor (MOS) capacitors are obtained by insulating the nanowires with a conformal 10 nm HfO2 layer and using a top Cr/Au metallization as one of the capacitor's electrodes. The described fabrication and characterization technique enables a systematic investigation of the carrier density in the nanowires as well as of the quality of the MOS interface.},
  author       = {Roddaro, Stefano and Storm, Kristian and Astromskas, Gvidas and Samuelson, Lars and Wernersson, Lars-Erik and Karlström, Olov and Wacker, Andreas},
  issn         = {0003-6951},
  language     = {eng},
  number       = {25},
  publisher    = {American Institute of Physics (AIP)},
  series       = {Applied Physics Letters},
  title        = {InAs nanowire metal-oxide-semiconductor capacitors},
  url          = {https://lup.lub.lu.se/search/ws/files/2821720/1172793.pdf},
  doi          = {10.1063/1.2949080},
  volume       = {92},
  year         = {2008},
}