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Diameter Limitation in Growth of III-Sb-Containing Nanowire Heterostructures.

Ek, Martin LU orcid ; Borg, Mattias LU orcid ; Johansson, Jonas LU orcid and Dick Thelander, Kimberly LU (2013) In ACS Nano 7(4). p.3668-3675
Abstract
The nanowire geometry offers significant advantages for exploiting the potential of III-Sb materials. Strain due to lattice mismatch is efficiently accommodated, and carrier confinement effects can be utilized in tunneling and quantum devices for which the III-Sb materials are of particular interest. It has however proven difficult to grow thin (below a few tens of nanometers), epitaxial III-Sb nanowires, as commonly no growth is observed below some critical diameter. Here we explore the processes limiting the diameter of III-Sb nanowires in a model system, in order to develop procedures to control this effect. The InAs-GaSb heterostructure system was chosen due to its great potential for tunneling devices in future low-power electronics.... (More)
The nanowire geometry offers significant advantages for exploiting the potential of III-Sb materials. Strain due to lattice mismatch is efficiently accommodated, and carrier confinement effects can be utilized in tunneling and quantum devices for which the III-Sb materials are of particular interest. It has however proven difficult to grow thin (below a few tens of nanometers), epitaxial III-Sb nanowires, as commonly no growth is observed below some critical diameter. Here we explore the processes limiting the diameter of III-Sb nanowires in a model system, in order to develop procedures to control this effect. The InAs-GaSb heterostructure system was chosen due to its great potential for tunneling devices in future low-power electronics. We find that with increasing growth temperature or precursor partial pressures, the critical diameter for GaSb growth on InAs decreases. To explain this trend we propose a model where the Gibbs-Thomson effect limits the Sb supersaturation in the catalyst particle. This understanding enabled us to further reduce the nanowire diameter down to 32 nm for GaSb grown on 21 nm InAs stems. Finally, we show that growth conditions must be carefully optimized for these small diameters, since radial growth increases for increased precursor partial pressures beyond the critical values required for nucleation. (Less)
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author
; ; and
organization
publishing date
type
Contribution to journal
publication status
published
subject
in
ACS Nano
volume
7
issue
4
pages
3668 - 3675
publisher
The American Chemical Society (ACS)
external identifiers
  • wos:000318143300084
  • pmid:23464707
  • scopus:84876592984
ISSN
1936-086X
DOI
10.1021/nn400684p
language
English
LU publication?
yes
additional info
The information about affiliations in this record was updated in December 2015. The record was previously connected to the following departments: Solid State Physics (011013006), Polymer and Materials Chemistry (LTH) (011001041)
id
8ac034b9-a9de-465d-8eaa-7180c74fbf42 (old id 3628544)
date added to LUP
2016-04-01 10:49:53
date last changed
2023-11-10 06:30:28
@article{8ac034b9-a9de-465d-8eaa-7180c74fbf42,
  abstract     = {{The nanowire geometry offers significant advantages for exploiting the potential of III-Sb materials. Strain due to lattice mismatch is efficiently accommodated, and carrier confinement effects can be utilized in tunneling and quantum devices for which the III-Sb materials are of particular interest. It has however proven difficult to grow thin (below a few tens of nanometers), epitaxial III-Sb nanowires, as commonly no growth is observed below some critical diameter. Here we explore the processes limiting the diameter of III-Sb nanowires in a model system, in order to develop procedures to control this effect. The InAs-GaSb heterostructure system was chosen due to its great potential for tunneling devices in future low-power electronics. We find that with increasing growth temperature or precursor partial pressures, the critical diameter for GaSb growth on InAs decreases. To explain this trend we propose a model where the Gibbs-Thomson effect limits the Sb supersaturation in the catalyst particle. This understanding enabled us to further reduce the nanowire diameter down to 32 nm for GaSb grown on 21 nm InAs stems. Finally, we show that growth conditions must be carefully optimized for these small diameters, since radial growth increases for increased precursor partial pressures beyond the critical values required for nucleation.}},
  author       = {{Ek, Martin and Borg, Mattias and Johansson, Jonas and Dick Thelander, Kimberly}},
  issn         = {{1936-086X}},
  language     = {{eng}},
  number       = {{4}},
  pages        = {{3668--3675}},
  publisher    = {{The American Chemical Society (ACS)}},
  series       = {{ACS Nano}},
  title        = {{Diameter Limitation in Growth of III-Sb-Containing Nanowire Heterostructures.}},
  url          = {{http://dx.doi.org/10.1021/nn400684p}},
  doi          = {{10.1021/nn400684p}},
  volume       = {{7}},
  year         = {{2013}},
}