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Strain state in semiconductor quantum dots on surfaces : a comparison of electron microscopy and finite element calculations

Carlsson, A LU ; Wallenberg, LR LU ; Persson, C and Seifert, W LU (1998) In Surface Science 406(1-3). p.48-56
Abstract
The strain distribution in InP quantum dots, coherently grown on a GaInP substrate, was determined by image analysis of high-resolution electron microscopy images. Image simulations were used to verify the obtained results. The measured strain values were compared with values obtained from finite element calculations, using the dot shape determined by electron microscopy. The measured and calculated strain values are in good agreement, supporting the use of finite element calculations for strain determination in quantum dots.
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author
; ; and
organization
publishing date
type
Contribution to journal
publication status
published
subject
keywords
electron microscopy, epitaxy, gallium phosphide, growth, indium phosphide, self-assembly, semiconductor-semiconductor thin film structures, single crystal epitaxy
in
Surface Science
volume
406
issue
1-3
pages
9 pages
publisher
Elsevier
external identifiers
  • scopus:0032073029
ISSN
0039-6028
DOI
10.1016/S0039-6028(98)00084-3
language
English
LU publication?
yes
id
8bc83262-5dfc-426f-9cc2-ca039b4d9317
date added to LUP
2023-10-31 16:09:19
date last changed
2023-11-02 14:45:16
@article{8bc83262-5dfc-426f-9cc2-ca039b4d9317,
  abstract     = {{The strain distribution in InP quantum dots, coherently grown on a GaInP substrate, was determined by image analysis of high-resolution electron microscopy images. Image simulations were used to verify the obtained results. The measured strain values were compared with values obtained from finite element calculations, using the dot shape determined by electron microscopy. The measured and calculated strain values are in good agreement, supporting the use of finite element calculations for strain determination in quantum dots.}},
  author       = {{Carlsson, A and Wallenberg, LR and Persson, C and Seifert, W}},
  issn         = {{0039-6028}},
  keywords     = {{electron microscopy; epitaxy; gallium phosphide; growth; indium phosphide; self-assembly; semiconductor-semiconductor thin film structures; single crystal epitaxy}},
  language     = {{eng}},
  month        = {{05}},
  number       = {{1-3}},
  pages        = {{48--56}},
  publisher    = {{Elsevier}},
  series       = {{Surface Science}},
  title        = {{Strain state in semiconductor quantum dots on surfaces : a comparison of electron microscopy and finite element calculations}},
  url          = {{http://dx.doi.org/10.1016/S0039-6028(98)00084-3}},
  doi          = {{10.1016/S0039-6028(98)00084-3}},
  volume       = {{406}},
  year         = {{1998}},
}