Unipolar and bipolar operation of InAs/InSb nanowire heterostructure field-effect transistors
(2011) In Journal of Applied Physics 110(6).- Abstract
- We present temperature dependent electrical measurements on n-type InAs/InSb nanowire heterostructure field-effect transistors. The barrier height of the heterostructure junction is determined to be 220 meV, indicating a broken bandgap alignment. A clear asymmetry is observed when applying a bias to either the InAs or the InSb side of the junction. Impact ionization and band-to-band tunneling is more pronounced when the large voltage drop occurs in the narrow bandgap InSb segment. For small negative gate-voltages, the InSb segment can be tuned toward p-type conduction, which induces a strong band-to-band tunneling across the heterostructucture junction. (c) 2011 American Institute of Physics. [doi: 10.1063/1.3633742]
Please use this url to cite or link to this publication:
https://lup.lub.lu.se/record/2211820
- author
- Nilsson, Henrik LU ; Caroff, Philippe LU ; Lind, Erik LU ; Pistol, Mats-Erik LU ; Thelander, Claes LU and Wernersson, Lars-Erik LU
- organization
- publishing date
- 2011
- type
- Contribution to journal
- publication status
- published
- subject
- in
- Journal of Applied Physics
- volume
- 110
- issue
- 6
- publisher
- American Institute of Physics (AIP)
- external identifiers
-
- wos:000295619300158
- scopus:80053550455
- ISSN
- 0021-8979
- DOI
- 10.1063/1.3633742
- language
- English
- LU publication?
- yes
- id
- 8f971e61-3cc3-45b9-98e4-22f87ffbabca (old id 2211820)
- date added to LUP
- 2016-04-01 10:56:10
- date last changed
- 2024-07-29 09:13:27
@article{8f971e61-3cc3-45b9-98e4-22f87ffbabca, abstract = {{We present temperature dependent electrical measurements on n-type InAs/InSb nanowire heterostructure field-effect transistors. The barrier height of the heterostructure junction is determined to be 220 meV, indicating a broken bandgap alignment. A clear asymmetry is observed when applying a bias to either the InAs or the InSb side of the junction. Impact ionization and band-to-band tunneling is more pronounced when the large voltage drop occurs in the narrow bandgap InSb segment. For small negative gate-voltages, the InSb segment can be tuned toward p-type conduction, which induces a strong band-to-band tunneling across the heterostructucture junction. (c) 2011 American Institute of Physics. [doi: 10.1063/1.3633742]}}, author = {{Nilsson, Henrik and Caroff, Philippe and Lind, Erik and Pistol, Mats-Erik and Thelander, Claes and Wernersson, Lars-Erik}}, issn = {{0021-8979}}, language = {{eng}}, number = {{6}}, publisher = {{American Institute of Physics (AIP)}}, series = {{Journal of Applied Physics}}, title = {{Unipolar and bipolar operation of InAs/InSb nanowire heterostructure field-effect transistors}}, url = {{http://dx.doi.org/10.1063/1.3633742}}, doi = {{10.1063/1.3633742}}, volume = {{110}}, year = {{2011}}, }