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InAs/GaSb vertical nanowire TFETs on Si for digital and analogue applications

Memisevic, Elvedin LU ; Svensson, J. LU ; Lind, E. LU orcid and Wernersson, L. E. LU (2016) 21st IEEE Silicon Nanoelectronics Workshop, SNW 2016 p.154-155
Abstract

Vertical InAs/GaSb nanowire TFETs with diameters of 20 nm and 25 nm have been fabricated and characterized. The influence of diameter, gate-placement, and nanowire numbers have been studied. The best device shows a subthreshold swing of 68 mV/dec at VDS = 0.3 V and 26 μA/μm at VDS = 0.3 V and VGS = 0.5 V. It achieves a self-gain larger than 100 with high transconductance efficiency.

Please use this url to cite or link to this publication:
author
; ; and
organization
publishing date
type
Chapter in Book/Report/Conference proceeding
publication status
published
subject
host publication
2016 IEEE Silicon Nanoelectronics Workshop, SNW 2016
article number
7578029
pages
2 pages
publisher
IEEE - Institute of Electrical and Electronics Engineers Inc.
conference name
21st IEEE Silicon Nanoelectronics Workshop, SNW 2016
conference location
Honolulu, United States
conference dates
2016-06-12 - 2016-06-13
external identifiers
  • scopus:84994791027
ISBN
9781509007264
DOI
10.1109/SNW.2016.7578029
language
English
LU publication?
yes
id
97aac6af-f489-4012-8a87-75bca63180db
date added to LUP
2016-11-25 14:33:34
date last changed
2024-04-19 13:31:40
@inproceedings{97aac6af-f489-4012-8a87-75bca63180db,
  abstract     = {{<p>Vertical InAs/GaSb nanowire TFETs with diameters of 20 nm and 25 nm have been fabricated and characterized. The influence of diameter, gate-placement, and nanowire numbers have been studied. The best device shows a subthreshold swing of 68 mV/dec at V<sub>DS</sub> = 0.3 V and 26 μA/μm at V<sub>DS</sub> = 0.3 V and V<sub>GS</sub> = 0.5 V. It achieves a self-gain larger than 100 with high transconductance efficiency.</p>}},
  author       = {{Memisevic, Elvedin and Svensson, J. and Lind, E. and Wernersson, L. E.}},
  booktitle    = {{2016 IEEE Silicon Nanoelectronics Workshop, SNW 2016}},
  isbn         = {{9781509007264}},
  language     = {{eng}},
  month        = {{09}},
  pages        = {{154--155}},
  publisher    = {{IEEE - Institute of Electrical and Electronics Engineers Inc.}},
  title        = {{InAs/GaSb vertical nanowire TFETs on Si for digital and analogue applications}},
  url          = {{https://lup.lub.lu.se/search/files/47395581/InAs_GaSb_Vertical_Nanowire_TFETs_on_Si_for_Digital_and_Analogue_Applications_Elvedin_Memisevic.pdf}},
  doi          = {{10.1109/SNW.2016.7578029}},
  year         = {{2016}},
}