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InAs/GaSb vertical nanowire TFETs on Si for digital and analogue applications

Memisevic, Elvedin LU ; Svensson, J. LU ; Lind, E. LU and Wernersson, L. E. LU (2016) 21st IEEE Silicon Nanoelectronics Workshop, SNW 2016 In 2016 IEEE Silicon Nanoelectronics Workshop, SNW 2016 p.154-155
Abstract

Vertical InAs/GaSb nanowire TFETs with diameters of 20 nm and 25 nm have been fabricated and characterized. The influence of diameter, gate-placement, and nanowire numbers have been studied. The best device shows a subthreshold swing of 68 mV/dec at VDS = 0.3 V and 26 μA/μm at VDS = 0.3 V and VGS = 0.5 V. It achieves a self-gain larger than 100 with high transconductance efficiency.

Please use this url to cite or link to this publication:
author
organization
publishing date
type
Chapter in Book/Report/Conference proceeding
publication status
published
subject
in
2016 IEEE Silicon Nanoelectronics Workshop, SNW 2016
pages
2 pages
publisher
Institute of Electrical and Electronics Engineers Inc.
conference name
21st IEEE Silicon Nanoelectronics Workshop, SNW 2016
external identifiers
  • scopus:84994791027
ISBN
9781509007264
DOI
10.1109/SNW.2016.7578029
language
English
LU publication?
yes
id
97aac6af-f489-4012-8a87-75bca63180db
date added to LUP
2016-11-25 14:33:34
date last changed
2017-03-15 10:04:44
@inproceedings{97aac6af-f489-4012-8a87-75bca63180db,
  abstract     = {<p>Vertical InAs/GaSb nanowire TFETs with diameters of 20 nm and 25 nm have been fabricated and characterized. The influence of diameter, gate-placement, and nanowire numbers have been studied. The best device shows a subthreshold swing of 68 mV/dec at V<sub>DS</sub> = 0.3 V and 26 μA/μm at V<sub>DS</sub> = 0.3 V and V<sub>GS</sub> = 0.5 V. It achieves a self-gain larger than 100 with high transconductance efficiency.</p>},
  author       = {Memisevic, Elvedin and Svensson, J. and Lind, E. and Wernersson, L. E.},
  booktitle    = {2016 IEEE Silicon Nanoelectronics Workshop, SNW 2016},
  isbn         = {9781509007264},
  language     = {eng},
  month        = {09},
  pages        = {154--155},
  publisher    = {Institute of Electrical and Electronics Engineers Inc.},
  title        = {InAs/GaSb vertical nanowire TFETs on Si for digital and analogue applications},
  url          = {http://dx.doi.org/10.1109/SNW.2016.7578029},
  year         = {2016},
}