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Study of the Interfacial Oxidation of InP Quantum Dots Synthesized from Tris(dimethylamino)phosphine

Duan, Xijian ; Ma, Jingrui ; Zhang, Wenda ; Liu, Pai ; Liu, Haochen ; Hao, Junjie ; Wang, Kai ; Samuelson, Lars LU and Sun, Xiao Wei (2023) In ACS Applied Materials and Interfaces 15(1). p.1619-1628
Abstract

InP quantum dots (QDs) are the most competitive in terms of environmentally friendly QDs. However, the synthesis of InP QDs requires breakthroughs in low-cost and safe phosphorus precursors such as tri(dimethylamino)phosphine [(DMA)3P]. It is found that even if the oxygen is completely avoided, there are still oxidation state defects at the core/shell interface of InP QDs. Herein, the record-breaking (DMA)3P-based red InP QDs were synthesized with the assist of HF processing to eliminate the InPOx defect and improve the fluorescence efficiency. The maximum photoluminescence quantum yield was 97.7%, which is the highest of the red InP QDs synthesized by the aminophosphine. The external quantum efficiency and brightness of the QD... (More)

InP quantum dots (QDs) are the most competitive in terms of environmentally friendly QDs. However, the synthesis of InP QDs requires breakthroughs in low-cost and safe phosphorus precursors such as tri(dimethylamino)phosphine [(DMA)3P]. It is found that even if the oxygen is completely avoided, there are still oxidation state defects at the core/shell interface of InP QDs. Herein, the record-breaking (DMA)3P-based red InP QDs were synthesized with the assist of HF processing to eliminate the InPOx defect and improve the fluorescence efficiency. The maximum photoluminescence quantum yield was 97.7%, which is the highest of the red InP QDs synthesized by the aminophosphine. The external quantum efficiency and brightness of the QD light-emitting diode device are also improved accordingly from 0.6% and 1276 cd·m-2 to 3.5% and 2355 cd·m-2, respectively.

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author
; ; ; ; ; ; ; and
organization
publishing date
type
Contribution to journal
publication status
published
subject
keywords
Cd-free, indium phosphide, oxidation defect, quantum dot, quantum light-emitting diode
in
ACS Applied Materials and Interfaces
volume
15
issue
1
pages
10 pages
publisher
The American Chemical Society (ACS)
external identifiers
  • pmid:36574641
  • scopus:85145285706
ISSN
1944-8244
DOI
10.1021/acsami.2c20138
language
English
LU publication?
yes
id
99056683-d20c-46a1-bfe5-732f8dce90b1
date added to LUP
2023-02-09 15:46:02
date last changed
2024-04-30 09:32:02
@article{99056683-d20c-46a1-bfe5-732f8dce90b1,
  abstract     = {{<p>InP quantum dots (QDs) are the most competitive in terms of environmentally friendly QDs. However, the synthesis of InP QDs requires breakthroughs in low-cost and safe phosphorus precursors such as tri(dimethylamino)phosphine [(DMA)3P]. It is found that even if the oxygen is completely avoided, there are still oxidation state defects at the core/shell interface of InP QDs. Herein, the record-breaking (DMA)3P-based red InP QDs were synthesized with the assist of HF processing to eliminate the InPOx defect and improve the fluorescence efficiency. The maximum photoluminescence quantum yield was 97.7%, which is the highest of the red InP QDs synthesized by the aminophosphine. The external quantum efficiency and brightness of the QD light-emitting diode device are also improved accordingly from 0.6% and 1276 cd·m-2 to 3.5% and 2355 cd·m-2, respectively.</p>}},
  author       = {{Duan, Xijian and Ma, Jingrui and Zhang, Wenda and Liu, Pai and Liu, Haochen and Hao, Junjie and Wang, Kai and Samuelson, Lars and Sun, Xiao Wei}},
  issn         = {{1944-8244}},
  keywords     = {{Cd-free; indium phosphide; oxidation defect; quantum dot; quantum light-emitting diode}},
  language     = {{eng}},
  number       = {{1}},
  pages        = {{1619--1628}},
  publisher    = {{The American Chemical Society (ACS)}},
  series       = {{ACS Applied Materials and Interfaces}},
  title        = {{Study of the Interfacial Oxidation of InP Quantum Dots Synthesized from Tris(dimethylamino)phosphine}},
  url          = {{http://dx.doi.org/10.1021/acsami.2c20138}},
  doi          = {{10.1021/acsami.2c20138}},
  volume       = {{15}},
  year         = {{2023}},
}