Strain mapping in free-standing heterostructured wurtzite InAs/InP nanowires
Larsson, Magnus LU
; Wagner, Jakob
LU
; Wallin, Mathias
LU
; Håkansson, Paul
LU
; Fröberg, Linus
LU
; Samuelson, Lars
LU
and Wallenberg, Reine
LU
(2007)
In Nanotechnology
18(1).
- Abstract
- The strain distribution in heterostructured wurtzite InAs/InP nanowires is measured by a peak finding technique using high resolution transmission electron microscopy images. We find that nanowires with a diameter of about 20 nm show a 10 nm strained area over the InAs/InP interface and the rest of the wire has a relaxed lattice structure. The lattice parameters and elastic properties for the wurtzite structure of InAs and InP are calculated and a nanowire interface is simulated using finite element calculations. Both the method and the experimental results are validated using a combination of finite element calculations and image simulations.
Please use this url to cite or link to this publication:
https://lup.lub.lu.se/record/675997
- author
- Larsson, Magnus
LU
; Wagner, Jakob
LU
; Wallin, Mathias
LU
; Håkansson, Paul
LU
; Fröberg, Linus
LU
; Samuelson, Lars
LU
and Wallenberg, Reine
LU
- organization
- publishing date
- 2007
- type
- Contribution to journal
- publication status
- published
- subject
- in
- Nanotechnology
- volume
- 18
- issue
- 1
- article number
- 015504
- publisher
- IOP Publishing
- external identifiers
-
- wos:000243836700019
- scopus:33846834038
- ISSN
- 0957-4484
- DOI
- 10.1088/0957-4484/18/1/015504
- language
- English
- LU publication?
- yes
- additional info
- The information about affiliations in this record was updated in December 2015. The record was previously connected to the following departments: Solid Mechanics (011094009), Solid State Physics (011013006), Polymer and Materials Chemistry (LTH) (011001041)
- id
- 995093a7-a5ec-4626-b3e8-0c9daed4fc81 (old id 675997)
- alternative location
- http://www.iop.org/EJ/abstract/0957-4484/18/1/015504
- http://www.ladon.se/cv/documents/abstractNODE2006.pdf
- date added to LUP
- 2016-04-01 12:13:14
- date last changed
- 2025-10-14 11:29:46
@article{995093a7-a5ec-4626-b3e8-0c9daed4fc81,
abstract = {{The strain distribution in heterostructured wurtzite InAs/InP nanowires is measured by a peak finding technique using high resolution transmission electron microscopy images. We find that nanowires with a diameter of about 20 nm show a 10 nm strained area over the InAs/InP interface and the rest of the wire has a relaxed lattice structure. The lattice parameters and elastic properties for the wurtzite structure of InAs and InP are calculated and a nanowire interface is simulated using finite element calculations. Both the method and the experimental results are validated using a combination of finite element calculations and image simulations.}},
author = {{Larsson, Magnus and Wagner, Jakob and Wallin, Mathias and Håkansson, Paul and Fröberg, Linus and Samuelson, Lars and Wallenberg, Reine}},
issn = {{0957-4484}},
language = {{eng}},
number = {{1}},
publisher = {{IOP Publishing}},
series = {{Nanotechnology}},
title = {{Strain mapping in free-standing heterostructured wurtzite InAs/InP nanowires}},
url = {{http://dx.doi.org/10.1088/0957-4484/18/1/015504}},
doi = {{10.1088/0957-4484/18/1/015504}},
volume = {{18}},
year = {{2007}},
}