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Temperature dependence of GaSb overgrowth of tungsten on GaSb (001) substrates using MOVPE

Astromskas, Gvidas LU ; Borg, Mattias LU orcid ; Caroff, Philippe LU and Wernersson, Lars-Erik (2008) 20th International Conference on Indium Phosphide and Related Materials p.354-356
Abstract
We demonstrate GaSb overgrowth over tungsten patterns and that selective area epitaxy is achievable in the W/GaSb system. By controlling the facet growth at low temperatures, it is possible to embed a metal grating in a thin layer.
Please use this url to cite or link to this publication:
author
; ; and
organization
publishing date
type
Chapter in Book/Report/Conference proceeding
publication status
published
subject
keywords
tungsten, overgrowth, lateral growth, SAE, GaSb
host publication
20th International Conference on Indium Phosphide and Related Materials, 2008. IPRM 2008
pages
354 - 356
publisher
IEEE - Institute of Electrical and Electronics Engineers Inc.
conference name
20th International Conference on Indium Phosphide and Related Materials
conference location
Versailles, France
conference dates
2008-05-25 - 2008-05-29
external identifiers
  • wos:000267695700099
  • scopus:70149098540
ISSN
1092-8669
DOI
10.1109/ICIPRM.2008.4702990
language
English
LU publication?
yes
id
a0fad89e-b6d4-49cf-8438-ce56722af915 (old id 1463536)
date added to LUP
2016-04-01 13:15:33
date last changed
2025-10-14 10:34:32
@inproceedings{a0fad89e-b6d4-49cf-8438-ce56722af915,
  abstract     = {{We demonstrate GaSb overgrowth over tungsten patterns and that selective area epitaxy is achievable in the W/GaSb system. By controlling the facet growth at low temperatures, it is possible to embed a metal grating in a thin layer.}},
  author       = {{Astromskas, Gvidas and Borg, Mattias and Caroff, Philippe and Wernersson, Lars-Erik}},
  booktitle    = {{20th International Conference on Indium Phosphide and Related Materials, 2008. IPRM 2008}},
  issn         = {{1092-8669}},
  keywords     = {{tungsten; overgrowth; lateral growth; SAE; GaSb}},
  language     = {{eng}},
  pages        = {{354--356}},
  publisher    = {{IEEE - Institute of Electrical and Electronics Engineers Inc.}},
  title        = {{Temperature dependence of GaSb overgrowth of tungsten on GaSb (001) substrates using MOVPE}},
  url          = {{https://lup.lub.lu.se/search/files/3262219/1731333.pdf}},
  doi          = {{10.1109/ICIPRM.2008.4702990}},
  year         = {{2008}},
}