Design of resonant tunneling permeable base transistors
(2004) 2003 International Symposium on Compound Semiconductors: Post-Conference Proceedings p.158-163- Abstract
- We evaluate the performance of resonant tunneling permeable base transistors (RT-PBTs) by numerical simulations. Since the current is limited by the barriers, a design with a low doping level around the embedded gate wires is chosen to improve the transconductance. We evaluate the influence of the various geometrical parameters, to optimize the design for high frequency operation. We obtain a performance comparable to conventional PBTs, to which we have incorporated the tunneling characteristics
Please use this url to cite or link to this publication:
https://lup.lub.lu.se/record/613448
- author
- Lindström, Peter LU ; Lind, Erik LU and Wernersson, Lars-Erik LU
- organization
- publishing date
- 2004
- type
- Chapter in Book/Report/Conference proceeding
- publication status
- published
- subject
- keywords
- geometrical parameters, transconductance, gate wires, doping level, permeable base transistors, resonant tunneling, high frequency operation, tunneling characteristics
- host publication
- 2003 International Symposium on Compound Semiconductors: Post-Conference Proceedings (IEEE Cat. No.03TH8767)
- pages
- 158 - 163
- publisher
- IEEE - Institute of Electrical and Electronics Engineers Inc.
- conference name
- 2003 International Symposium on Compound Semiconductors: Post-Conference Proceedings
- conference location
- San Diego, CA, United States
- conference dates
- 2003-08-25 - 2003-08-27
- external identifiers
-
- wos:000226028400026
- ISBN
- 0-7803-8614-0
- language
- English
- LU publication?
- yes
- id
- a13057d6-dd7d-4081-a2f1-1911efe4e78c (old id 613448)
- alternative location
- http://ieeexplore.ieee.org/xpls/abs_all.jsp?arnumber=1354448
- date added to LUP
- 2016-04-04 09:54:39
- date last changed
- 2018-11-21 20:55:38
@inproceedings{a13057d6-dd7d-4081-a2f1-1911efe4e78c, abstract = {{We evaluate the performance of resonant tunneling permeable base transistors (RT-PBTs) by numerical simulations. Since the current is limited by the barriers, a design with a low doping level around the embedded gate wires is chosen to improve the transconductance. We evaluate the influence of the various geometrical parameters, to optimize the design for high frequency operation. We obtain a performance comparable to conventional PBTs, to which we have incorporated the tunneling characteristics}}, author = {{Lindström, Peter and Lind, Erik and Wernersson, Lars-Erik}}, booktitle = {{2003 International Symposium on Compound Semiconductors: Post-Conference Proceedings (IEEE Cat. No.03TH8767)}}, isbn = {{0-7803-8614-0}}, keywords = {{geometrical parameters; transconductance; gate wires; doping level; permeable base transistors; resonant tunneling; high frequency operation; tunneling characteristics}}, language = {{eng}}, pages = {{158--163}}, publisher = {{IEEE - Institute of Electrical and Electronics Engineers Inc.}}, title = {{Design of resonant tunneling permeable base transistors}}, url = {{http://ieeexplore.ieee.org/xpls/abs_all.jsp?arnumber=1354448}}, year = {{2004}}, }