Synthesis and properties of antimonide nanowires
Borg, Mattias LU
and Wernersson, Lars-Erik
LU
(2013)
In Nanotechnology
24(20).
- Abstract
- Antimonide semiconductors are suitable for low-power electronics and long-wavelength optoelectronic applications. In recent years research on antimonide nanowires has become a rapidly growing field, and nano-materials have promising applications in fundamental physics research, for tunnel field-effect transistors, and long-wavelength detectors. In this review, we give an overview of the field of antimonide nanowires, beginning with a description of the synthesis of these nano-materials. Here we summarize numerous reports on antimonide nanowire growth, with the aim to give an overall picture of the distinctive properties of antimonide nanowire synthesis. Secondly, we review the data on the physical properties and emerging applications for... (More)
- Antimonide semiconductors are suitable for low-power electronics and long-wavelength optoelectronic applications. In recent years research on antimonide nanowires has become a rapidly growing field, and nano-materials have promising applications in fundamental physics research, for tunnel field-effect transistors, and long-wavelength detectors. In this review, we give an overview of the field of antimonide nanowires, beginning with a description of the synthesis of these nano-materials. Here we summarize numerous reports on antimonide nanowire growth, with the aim to give an overall picture of the distinctive properties of antimonide nanowire synthesis. Secondly, we review the data on the physical properties and emerging applications for antimonide nanowires, focusing on applications in electronics and optics. (Less)
Please use this url to cite or link to this publication:
https://lup.lub.lu.se/record/3843167
- author
- Borg, Mattias
LU
and Wernersson, Lars-Erik
LU
- organization
- publishing date
- 2013
- type
- Contribution to journal
- publication status
- published
- subject
- in
- Nanotechnology
- volume
- 24
- issue
- 20
- article number
- 202001
- publisher
- IOP Publishing
- external identifiers
-
- wos:000317960400001
- scopus:84876939865
- pmid:23598286
- ISSN
- 0957-4484
- DOI
- 10.1088/0957-4484/24/20/202001
- language
- English
- LU publication?
- yes
- id
- a1964aac-f1a8-4038-9257-d0cac677efde (old id 3843167)
- date added to LUP
- 2016-04-01 10:26:51
- date last changed
- 2023-11-09 20:59:54
@article{a1964aac-f1a8-4038-9257-d0cac677efde,
abstract = {{Antimonide semiconductors are suitable for low-power electronics and long-wavelength optoelectronic applications. In recent years research on antimonide nanowires has become a rapidly growing field, and nano-materials have promising applications in fundamental physics research, for tunnel field-effect transistors, and long-wavelength detectors. In this review, we give an overview of the field of antimonide nanowires, beginning with a description of the synthesis of these nano-materials. Here we summarize numerous reports on antimonide nanowire growth, with the aim to give an overall picture of the distinctive properties of antimonide nanowire synthesis. Secondly, we review the data on the physical properties and emerging applications for antimonide nanowires, focusing on applications in electronics and optics.}},
author = {{Borg, Mattias and Wernersson, Lars-Erik}},
issn = {{0957-4484}},
language = {{eng}},
number = {{20}},
publisher = {{IOP Publishing}},
series = {{Nanotechnology}},
title = {{Synthesis and properties of antimonide nanowires}},
url = {{http://dx.doi.org/10.1088/0957-4484/24/20/202001}},
doi = {{10.1088/0957-4484/24/20/202001}},
volume = {{24}},
year = {{2013}},
}