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Crystal Structure Induced Preferential Surface Alloying of Sb on Wurtzite/Zinc Blende GaAs Nanowires

Hjort, Martin LU ; Kratzer, Peter; Lehmann, Sebastian LU ; Patel, Sahil J.; Dick, Kimberly A. LU ; Palmstrøm, Chris J.; Timm, Rainer LU and Mikkelsen, Anders LU (2017) In Nano Letters 17(6). p.3634-3640
Abstract

We study the surface diffusion and alloying of Sb into GaAs nanowires (NWs) with controlled axial stacking of wurtzite (Wz) and zinc blende (Zb) crystal phases. Using atomically resolved scanning tunneling microscopy, we find that Sb preferentially incorporates into the surface layer of the {110}-terminated Zb segments rather than the {1120}-terminated Wz segments. Density functional theory calculations verify the higher surface incorporation rate into the Zb phase and find that it is related to differences in the energy barrier of the Sb-for-As exchange reaction on the two surfaces. These findings demonstrate a simple processing-free route to compositional engineering at the monolayer level along NWs.

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author
organization
publishing date
type
Contribution to journal
publication status
published
subject
keywords
GaAs, Sb-for-As exchange, STM, surface alloy, wurtzite
in
Nano Letters
volume
17
issue
6
pages
7 pages
publisher
The American Chemical Society
external identifiers
  • scopus:85020745051
ISSN
1530-6984
DOI
10.1021/acs.nanolett.7b00806
language
English
LU publication?
yes
id
a24e6e7f-94db-48e9-ab9b-0a8c2f80c0a2
date added to LUP
2017-07-04 09:24:16
date last changed
2018-01-07 12:10:28
@article{a24e6e7f-94db-48e9-ab9b-0a8c2f80c0a2,
  abstract     = {<p>We study the surface diffusion and alloying of Sb into GaAs nanowires (NWs) with controlled axial stacking of wurtzite (Wz) and zinc blende (Zb) crystal phases. Using atomically resolved scanning tunneling microscopy, we find that Sb preferentially incorporates into the surface layer of the {110}-terminated Zb segments rather than the {1120}-terminated Wz segments. Density functional theory calculations verify the higher surface incorporation rate into the Zb phase and find that it is related to differences in the energy barrier of the Sb-for-As exchange reaction on the two surfaces. These findings demonstrate a simple processing-free route to compositional engineering at the monolayer level along NWs.</p>},
  author       = {Hjort, Martin and Kratzer, Peter and Lehmann, Sebastian and Patel, Sahil J. and Dick, Kimberly A. and Palmstrøm, Chris J. and Timm, Rainer and Mikkelsen, Anders},
  issn         = {1530-6984},
  keyword      = {GaAs,Sb-for-As exchange,STM,surface alloy,wurtzite},
  language     = {eng},
  month        = {06},
  number       = {6},
  pages        = {3634--3640},
  publisher    = {The American Chemical Society},
  series       = {Nano Letters},
  title        = {Crystal Structure Induced Preferential Surface Alloying of Sb on Wurtzite/Zinc Blende GaAs Nanowires},
  url          = {http://dx.doi.org/10.1021/acs.nanolett.7b00806},
  volume       = {17},
  year         = {2017},
}