Defect-free InP nanowires grown in [001] direction on InP(001)
(2004) In Applied Physics Letters 85(11). p.2077-2079- Abstract
- We report on [001] InP nanowires grown by metalorganic vapor phase epitaxy directly on (001) InP substrates. Characterization by scanning electron microscopy and transmission electron microscopy reveals wires with nearly square cross sections and a perfect zinc-blende crystalline structure that is free of stacking faults. Photoluminescence measurements of single [001] nanowires exhibit a narrow and intense emission peak at approximately 1.4 eV, whereas <111>B grown reference wires show additional broad luminescence peaks at lower energy. The origin of this uncommon wire growth direction [001] is discussed as a means of controlled formation of [00l]-oriented nanowires on (001) substrates. (C) 2004 American Institute of Physics.
Please use this url to cite or link to this publication:
https://lup.lub.lu.se/record/140858
- author
- Krishnamachari, U ; Borgström, Magnus LU ; Ohlsson, Jonas LU ; Panev, Nikolay LU ; Samuelson, Lars LU ; Seifert, Werner LU ; Larsson, Magnus LU and Wallenberg, Reine LU
- organization
- publishing date
- 2004
- type
- Contribution to journal
- publication status
- published
- subject
- in
- Applied Physics Letters
- volume
- 85
- issue
- 11
- pages
- 2077 - 2079
- publisher
- American Institute of Physics (AIP)
- external identifiers
-
- wos:000223923300070
- scopus:5444234721
- ISSN
- 0003-6951
- DOI
- 10.1063/1.1784548
- language
- English
- LU publication?
- yes
- additional info
- The information about affiliations in this record was updated in December 2015. The record was previously connected to the following departments: Polymer and Materials Chemistry (LTH) (011001041), Solid State Physics (011013006)
- id
- a293e8c3-7674-4c2b-9bff-b94d44c30967 (old id 140858)
- date added to LUP
- 2016-04-01 12:24:07
- date last changed
- 2022-01-27 03:16:22
@article{a293e8c3-7674-4c2b-9bff-b94d44c30967, abstract = {{We report on [001] InP nanowires grown by metalorganic vapor phase epitaxy directly on (001) InP substrates. Characterization by scanning electron microscopy and transmission electron microscopy reveals wires with nearly square cross sections and a perfect zinc-blende crystalline structure that is free of stacking faults. Photoluminescence measurements of single [001] nanowires exhibit a narrow and intense emission peak at approximately 1.4 eV, whereas <111>B grown reference wires show additional broad luminescence peaks at lower energy. The origin of this uncommon wire growth direction [001] is discussed as a means of controlled formation of [00l]-oriented nanowires on (001) substrates. (C) 2004 American Institute of Physics.}}, author = {{Krishnamachari, U and Borgström, Magnus and Ohlsson, Jonas and Panev, Nikolay and Samuelson, Lars and Seifert, Werner and Larsson, Magnus and Wallenberg, Reine}}, issn = {{0003-6951}}, language = {{eng}}, number = {{11}}, pages = {{2077--2079}}, publisher = {{American Institute of Physics (AIP)}}, series = {{Applied Physics Letters}}, title = {{Defect-free InP nanowires grown in [001] direction on InP(001)}}, url = {{http://dx.doi.org/10.1063/1.1784548}}, doi = {{10.1063/1.1784548}}, volume = {{85}}, year = {{2004}}, }