Thermal conductivity of AlxGa1−xN (0≤x≤1) epitaxial layers
(2022) In Physical Review Materials 6(10).- Abstract
- AlxGa1−xN
ternary alloys are emerging ultrawide band gap semiconductor materials
for high-power electronics applications. The heat dissipation, which
mainly depends on the thermal conductivity of the constituent material
in the device structures, is the key for device performance and
reliability. However, the reports on the thermal conductivity of AlxGa1−xN alloys are very limited. Here, we present a comprehensive study of the thermal conductivity of AlxGa1−xN in the entire Al composition range. Thick AlxGa1−xN
layers grown by metal-organic chemical vapor deposition on GaN/sapphire
and GaN/SiC templates are examined. The thermal conductivity
measurements are done by the transient thermoreflectance... (More) - AlxGa1−xN
ternary alloys are emerging ultrawide band gap semiconductor materials
for high-power electronics applications. The heat dissipation, which
mainly depends on the thermal conductivity of the constituent material
in the device structures, is the key for device performance and
reliability. However, the reports on the thermal conductivity of AlxGa1−xN alloys are very limited. Here, we present a comprehensive study of the thermal conductivity of AlxGa1−xN in the entire Al composition range. Thick AlxGa1−xN
layers grown by metal-organic chemical vapor deposition on GaN/sapphire
and GaN/SiC templates are examined. The thermal conductivity
measurements are done by the transient thermoreflectance method at room
temperature. The effects of the Al composition, dislocation density, Si
doping, and layer thickness on the thermal conductivity of AlxGa1−xN
layers are thoroughly investigated. All experimental data are fitted by
the modified Callaway model within the virtual crystal approximation,
and the interplay between the different phonon scattering mechanisms is
analyzed and discussed. (Less)
Please use this url to cite or link to this publication:
https://lup.lub.lu.se/record/a53b41cb-0e8f-4c5b-a0e9-90a3892ad684
- author
- Tran, Dat Q. ; Carrascon, Rosalia D. ; Iwaya, Motoaki ; Monemar, Bo LU ; Darakchieva, Vanya LU and Paskov, Plamen P.
- organization
- publishing date
- 2022
- type
- Contribution to journal
- publication status
- published
- subject
- in
- Physical Review Materials
- volume
- 6
- issue
- 10
- article number
- 104602
- pages
- 13 pages
- publisher
- American Physical Society
- external identifiers
-
- scopus:85140260699
- ISSN
- 2475-9953
- DOI
- 10.1103/PhysRevMaterials.6.104602
- language
- English
- LU publication?
- yes
- id
- a53b41cb-0e8f-4c5b-a0e9-90a3892ad684
- date added to LUP
- 2022-12-05 16:01:49
- date last changed
- 2023-11-16 20:42:35
@article{a53b41cb-0e8f-4c5b-a0e9-90a3892ad684, abstract = {{AlxGa1−xN<br> ternary alloys are emerging ultrawide band gap semiconductor materials <br> for high-power electronics applications. The heat dissipation, which <br> mainly depends on the thermal conductivity of the constituent material <br> in the device structures, is the key for device performance and <br> reliability. However, the reports on the thermal conductivity of AlxGa1−xN alloys are very limited. Here, we present a comprehensive study of the thermal conductivity of AlxGa1−xN in the entire Al composition range. Thick AlxGa1−xN<br> layers grown by metal-organic chemical vapor deposition on GaN/sapphire<br> and GaN/SiC templates are examined. The thermal conductivity <br> measurements are done by the transient thermoreflectance method at room <br> temperature. The effects of the Al composition, dislocation density, Si <br> doping, and layer thickness on the thermal conductivity of AlxGa1−xN<br> layers are thoroughly investigated. All experimental data are fitted by<br> the modified Callaway model within the virtual crystal approximation, <br> and the interplay between the different phonon scattering mechanisms is <br> analyzed and discussed.}}, author = {{Tran, Dat Q. and Carrascon, Rosalia D. and Iwaya, Motoaki and Monemar, Bo and Darakchieva, Vanya and Paskov, Plamen P.}}, issn = {{2475-9953}}, language = {{eng}}, number = {{10}}, publisher = {{American Physical Society}}, series = {{Physical Review Materials}}, title = {{Thermal conductivity of Al<i><sub>x</sub></i>Ga<sub>1−<i>x</i></sub>N (0≤<i>x</i>≤1) epitaxial layers}}, url = {{http://dx.doi.org/10.1103/PhysRevMaterials.6.104602}}, doi = {{10.1103/PhysRevMaterials.6.104602}}, volume = {{6}}, year = {{2022}}, }