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A 2.8-to-5.8 GHz harmonic VCO based on an 8-shaped inductor in a 28 nm UTBB FD-SOI CMOS process

Mahmoud, Ahmed LU ; Fanori, Luca; Mattsson, Thomas; Caputa, Peter and Andreani, Piero LU (2016) In Analog Integrated Circuits and Signal Processing 88(3). p.391-399
Abstract
A 2.8-to-5.8 GHz harmonic VCO designed in a 28 nm UTBB FD-SOI CMOS process adopts a reconfigurable active core to save power at the lower oscillation frequencies, and to enable a trade-off between power consumption and phase noise at all frequencies. Interference caused by the magnetic coupling to and from the VCO inductor is greatly attenuated by resorting to an inductor in the shape of an 8. Simulations of the magnetic coupling between an 8-shaped inductor and a reference inductor show a reduction in magnetic coupling as high as 44 dB, depending also on size, orientation, and shape of the reference inductor. The UTBB FD-SOI CMOS process is instrumental to achieve a tuning range in excess of one octave at low power consumption. The VCO... (More)
A 2.8-to-5.8 GHz harmonic VCO designed in a 28 nm UTBB FD-SOI CMOS process adopts a reconfigurable active core to save power at the lower oscillation frequencies, and to enable a trade-off between power consumption and phase noise at all frequencies. Interference caused by the magnetic coupling to and from the VCO inductor is greatly attenuated by resorting to an inductor in the shape of an 8. Simulations of the magnetic coupling between an 8-shaped inductor and a reference inductor show a reduction in magnetic coupling as high as 44 dB, depending also on size, orientation, and shape of the reference inductor. The UTBB FD-SOI CMOS process is instrumental to achieve a tuning range in excess of one octave at low power consumption. The VCO operates from 0.9 V and has a figure-of-merit of 186–189 dBc/Hz, depending on the oscillation frequency and the configuration of the oscillator core. The active area of the VCO is 380 × 700 µm. (Less)
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author
organization
publishing date
type
Contribution to journal
publication status
published
subject
keywords
8-Shaped , Magnetic coupling, VCO , Class-B , Reconfigurable core , UTBB FD–SOI , CMOS, Low phase noise, One octave
in
Analog Integrated Circuits and Signal Processing
volume
88
issue
3
pages
9 pages
publisher
Springer
external identifiers
  • Scopus:84969833424
  • WOS:000384206500002
ISSN
0925-1030
DOI
10.1007/s10470-016-0759-4
language
English
LU publication?
yes
id
a95278a8-af29-4e22-8fa3-4105016c6183
date added to LUP
2016-05-31 11:11:03
date last changed
2017-01-01 08:27:05
@article{a95278a8-af29-4e22-8fa3-4105016c6183,
  abstract     = {A 2.8-to-5.8 GHz harmonic VCO designed in a 28 nm UTBB FD-SOI CMOS process adopts a reconfigurable active core to save power at the lower oscillation frequencies, and to enable a trade-off between power consumption and phase noise at all frequencies. Interference caused by the magnetic coupling to and from the VCO inductor is greatly attenuated by resorting to an inductor in the shape of an 8. Simulations of the magnetic coupling between an 8-shaped inductor and a reference inductor show a reduction in magnetic coupling as high as 44 dB, depending also on size, orientation, and shape of the reference inductor. The UTBB FD-SOI CMOS process is instrumental to achieve a tuning range in excess of one octave at low power consumption. The VCO operates from 0.9 V and has a figure-of-merit of 186–189 dBc/Hz, depending on the oscillation frequency and the configuration of the oscillator core. The active area of the VCO is 380 × 700 µm.},
  author       = {Mahmoud, Ahmed and Fanori, Luca and Mattsson, Thomas and Caputa, Peter and Andreani, Piero},
  issn         = {0925-1030},
  keyword      = {8-Shaped ,Magnetic coupling, VCO ,Class-B ,Reconfigurable core ,UTBB FD–SOI ,CMOS, Low phase noise,One octave },
  language     = {eng},
  month        = {05},
  number       = {3},
  pages        = {391--399},
  publisher    = {Springer},
  series       = {Analog Integrated Circuits and Signal Processing},
  title        = {A 2.8-to-5.8 GHz harmonic VCO based on an 8-shaped inductor in a 28 nm UTBB FD-SOI CMOS process},
  url          = {http://dx.doi.org/10.1007/s10470-016-0759-4},
  volume       = {88},
  year         = {2016},
}