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Single-electron transistors in heterostructure nanowires.

Thelander, Claes LU ; Mårtensson, Thomas LU ; Björk, Mikael LU ; Ohlsson, B J; Larsson, Marcus LU ; Wallenberg, Reine LU and Samuelson, Lars LU (2003) In Applied Physics Letters 83(10). p.2052-2054
Abstract
Semiconductor-based single-electron transistors have been fabricated using heterostructure nanowire growth, by introducing a double barrier of InP into InAs nanowires. From electrical measurements, we observe a charging energy of 4 meV for the approximately 55 nm diameter and 100 nm long InAs islands between the InP barriers. The Coulomb blockade can be periodically lifted as a function of gate voltage for all devices, which is a typical signature of single-island transistors. Homogeneous InAs nanowires show no such effect for the corresponding voltage ranges. ©2003 American Institute of Physics.
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author
organization
publishing date
type
Contribution to journal
publication status
published
subject
in
Applied Physics Letters
volume
83
issue
10
pages
2052 - 2054
publisher
American Institute of Physics
external identifiers
  • wos:000185089800049
  • scopus:0141920578
ISSN
0003-6951
DOI
language
English
LU publication?
yes
id
b01a6230-1c47-4e26-8a97-c3894418cb26 (old id 128432)
date added to LUP
2007-07-13 16:32:56
date last changed
2018-06-11 14:03:11
@article{b01a6230-1c47-4e26-8a97-c3894418cb26,
  abstract     = {Semiconductor-based single-electron transistors have been fabricated using heterostructure nanowire growth, by introducing a double barrier of InP into InAs nanowires. From electrical measurements, we observe a charging energy of 4 meV for the approximately 55 nm diameter and 100 nm long InAs islands between the InP barriers. The Coulomb blockade can be periodically lifted as a function of gate voltage for all devices, which is a typical signature of single-island transistors. Homogeneous InAs nanowires show no such effect for the corresponding voltage ranges. ©2003 American Institute of Physics.},
  author       = {Thelander, Claes and Mårtensson, Thomas and Björk, Mikael and Ohlsson, B J and Larsson, Marcus and Wallenberg, Reine and Samuelson, Lars},
  issn         = {0003-6951},
  language     = {eng},
  number       = {10},
  pages        = {2052--2054},
  publisher    = {American Institute of Physics},
  series       = {Applied Physics Letters},
  title        = {Single-electron transistors in heterostructure nanowires.},
  url          = {http://dx.doi.org/},
  volume       = {83},
  year         = {2003},
}