Epitaxial growth of β -Ga 2 O 3 by hot-wall MOCVD
(2022) In AIP Advances 12(5). p.055022-055022- Abstract
- The hot-wall metalorganic chemical vapor deposition (MOCVD) concept, previously shown to enable superior material quality and high
performance devices based on wide bandgap semiconductors, such as Ga(Al)N and SiC, has been applied to the epitaxial growth of
β-Ga2O3. Epitaxial β-Ga2O3 layers at high growth rates (above 1 μm/h), at low reagent flows, and at reduced growth temperatures
(740 ○C) are demonstrated. A high crystalline quality epitaxial material on a c-plane sapphire substrate is attained as corroborated by a combination of x-ray diffraction, high-resolution scanning transmission electron microscopy, and spectroscopic ellipsometry measurements. The
hot-wall MOCVD process is transferred to homoepitaxy, and... (More) - The hot-wall metalorganic chemical vapor deposition (MOCVD) concept, previously shown to enable superior material quality and high
performance devices based on wide bandgap semiconductors, such as Ga(Al)N and SiC, has been applied to the epitaxial growth of
β-Ga2O3. Epitaxial β-Ga2O3 layers at high growth rates (above 1 μm/h), at low reagent flows, and at reduced growth temperatures
(740 ○C) are demonstrated. A high crystalline quality epitaxial material on a c-plane sapphire substrate is attained as corroborated by a combination of x-ray diffraction, high-resolution scanning transmission electron microscopy, and spectroscopic ellipsometry measurements. The
hot-wall MOCVD process is transferred to homoepitaxy, and single-crystalline homoepitaxial β-Ga2O3 layers are demonstrated with a 201 ¯
rocking curve width of 118 arc sec, which is comparable to those of the edge-defined film-fed grown (201) ¯ β-Ga2O3 substrates, indicative of
similar dislocation densities for epilayers and substrates. Hence, hot-wall MOCVD is proposed as a prospective growth method to be further
explored for the fabrication of β-Ga2O3 (Less)
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https://lup.lub.lu.se/record/b32a9322-19d6-4e1c-94d5-aa63b60cf895
- author
- organization
- publishing date
- 2022-05-01
- type
- Contribution to journal
- publication status
- published
- subject
- in
- AIP Advances
- volume
- 12
- issue
- 5
- pages
- 055022 - 055022
- publisher
- American Institute of Physics (AIP)
- external identifiers
-
- scopus:85130609324
- ISSN
- 2158-3226
- DOI
- 10.1063/5.0087571
- language
- English
- LU publication?
- yes
- id
- b32a9322-19d6-4e1c-94d5-aa63b60cf895
- alternative location
- https://aip.scitation.org/doi/10.1063/5.0087571
- date added to LUP
- 2022-05-18 18:38:07
- date last changed
- 2023-11-21 05:45:39
@article{b32a9322-19d6-4e1c-94d5-aa63b60cf895, abstract = {{The hot-wall metalorganic chemical vapor deposition (MOCVD) concept, previously shown to enable superior material quality and high<br/>performance devices based on wide bandgap semiconductors, such as Ga(Al)N and SiC, has been applied to the epitaxial growth of<br/>β-Ga2O3. Epitaxial β-Ga2O3 layers at high growth rates (above 1 μm/h), at low reagent flows, and at reduced growth temperatures<br/>(740 ○C) are demonstrated. A high crystalline quality epitaxial material on a c-plane sapphire substrate is attained as corroborated by a combination of x-ray diffraction, high-resolution scanning transmission electron microscopy, and spectroscopic ellipsometry measurements. The<br/>hot-wall MOCVD process is transferred to homoepitaxy, and single-crystalline homoepitaxial β-Ga2O3 layers are demonstrated with a 201 ¯<br/>rocking curve width of 118 arc sec, which is comparable to those of the edge-defined film-fed grown (201) ¯ β-Ga2O3 substrates, indicative of<br/>similar dislocation densities for epilayers and substrates. Hence, hot-wall MOCVD is proposed as a prospective growth method to be further<br/>explored for the fabrication of β-Ga2O3}}, author = {{Gogova, Daniela and Ghezellou, Misagh and Tran, Dat Q. and Richter, Steffen and Papamichail, Alexis and Hassan, Jawad Ul and Persson, Axel R. and Persson, Per O. Å. and Kordina, Olof and Monemar, Bo and Hilfiker, Matthew and Schubert, Mathias and Paskov, Plamen P. and Darakchieva, Vanya}}, issn = {{2158-3226}}, language = {{eng}}, month = {{05}}, number = {{5}}, pages = {{055022--055022}}, publisher = {{American Institute of Physics (AIP)}}, series = {{AIP Advances}}, title = {{Epitaxial growth of β -Ga 2 O 3 by hot-wall MOCVD}}, url = {{http://dx.doi.org/10.1063/5.0087571}}, doi = {{10.1063/5.0087571}}, volume = {{12}}, year = {{2022}}, }