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Influence of contacts and applied voltage on a structure of a single GaN nanowire

Lazarev, Sergey ; Kim, Young Yong ; Gelisio, Luca ; Bi, Zhaoxia LU orcid ; Nowzari, Ali LU ; Zaluzhnyy, Ivan A. ; Khubbutdinov, Ruslan ; Dzhigaev, Dmitry LU orcid ; Jeromin, Arno and Keller, Thomas F. , et al. (2021) In Applied Sciences (Switzerland) 11(20).
Abstract

Semiconductor nanowires (NWs) have a broad range of applications for nano-and optoelectronics. The strain field of gallium nitride (GaN) NWs could be significantly changed when contacts are applied to them to form a final device, especially considering the piezoelectric properties of GaN. Investigation of influence of the metallic contacts on the structure of the NWs is of high importance for their applications in real devices. We have studied a series of different type of contacts and influence of the applied voltage bias on the contacted GaN NWs with the length of about 3 to 4 micrometers and with two different diameters of 200 nm and 350 nm. It was demonstrated that the NWs with the diameter of 200 nm are bend already by the... (More)

Semiconductor nanowires (NWs) have a broad range of applications for nano-and optoelectronics. The strain field of gallium nitride (GaN) NWs could be significantly changed when contacts are applied to them to form a final device, especially considering the piezoelectric properties of GaN. Investigation of influence of the metallic contacts on the structure of the NWs is of high importance for their applications in real devices. We have studied a series of different type of contacts and influence of the applied voltage bias on the contacted GaN NWs with the length of about 3 to 4 micrometers and with two different diameters of 200 nm and 350 nm. It was demonstrated that the NWs with the diameter of 200 nm are bend already by the interaction with the substrate. For all GaN NWs, significant structural changes were revealed after the contacts deposition. The results of our research may contribute to the future optoelectronic applications of the GaN nanowires.

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organization
publishing date
type
Contribution to journal
publication status
published
subject
keywords
Bragg coherent diffraction, Finite element method, GaN nanowires, Piezoelectric effect
in
Applied Sciences (Switzerland)
volume
11
issue
20
article number
9419
publisher
MDPI AG
external identifiers
  • scopus:85117206569
ISSN
2076-3417
DOI
10.3390/app11209419
language
English
LU publication?
yes
additional info
Publisher Copyright: © 2021 by the authors. Licensee MDPI, Basel, Switzerland.
id
b7eb63be-1077-4b0b-a31b-78fce7803b0b
date added to LUP
2021-10-26 13:33:33
date last changed
2023-10-11 04:05:05
@article{b7eb63be-1077-4b0b-a31b-78fce7803b0b,
  abstract     = {{<p>Semiconductor nanowires (NWs) have a broad range of applications for nano-and optoelectronics. The strain field of gallium nitride (GaN) NWs could be significantly changed when contacts are applied to them to form a final device, especially considering the piezoelectric properties of GaN. Investigation of influence of the metallic contacts on the structure of the NWs is of high importance for their applications in real devices. We have studied a series of different type of contacts and influence of the applied voltage bias on the contacted GaN NWs with the length of about 3 to 4 micrometers and with two different diameters of 200 nm and 350 nm. It was demonstrated that the NWs with the diameter of 200 nm are bend already by the interaction with the substrate. For all GaN NWs, significant structural changes were revealed after the contacts deposition. The results of our research may contribute to the future optoelectronic applications of the GaN nanowires.</p>}},
  author       = {{Lazarev, Sergey and Kim, Young Yong and Gelisio, Luca and Bi, Zhaoxia and Nowzari, Ali and Zaluzhnyy, Ivan A. and Khubbutdinov, Ruslan and Dzhigaev, Dmitry and Jeromin, Arno and Keller, Thomas F. and Sprung, Michael and Mikkelsen, Anders and Samuelson, Lars and Vartanyants, Ivan A.}},
  issn         = {{2076-3417}},
  keywords     = {{Bragg coherent diffraction; Finite element method; GaN nanowires; Piezoelectric effect}},
  language     = {{eng}},
  month        = {{10}},
  number       = {{20}},
  publisher    = {{MDPI AG}},
  series       = {{Applied Sciences (Switzerland)}},
  title        = {{Influence of contacts and applied voltage on a structure of a single GaN nanowire}},
  url          = {{http://dx.doi.org/10.3390/app11209419}},
  doi          = {{10.3390/app11209419}},
  volume       = {{11}},
  year         = {{2021}},
}