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Electron Tomography Reveals the Droplet Covered Surface Structure of Nanowires Grown by Aerotaxy

Persson, Axel R. LU orcid ; Metaferia, Wondwosen LU ; Sivakumar, Sudhakar LU ; Samuelson, Lars LU ; Magnusson, Martin H. LU and Wallenberg, Reine LU (2018) In Small 14(33).
Abstract

For the purpose of functionalizing III-V semiconductor nanowires using n-doping, Sn-doped GaAs zincblende nanowires are produced, using the growth method of Aerotaxy. The growth conditions used are such that Ga droplets, formed on the nanowire surface, increase in number and concentrations when the Sn-precursor concentration is increased. Droplet-covered wires grown with varying Sn concentrations are analyzed by transmission electron microscopy and electron tomography, which together establish the positioning of the droplets to be preferentially on {−111}B facets. These facets have the same polarity as the main wire growth direction, [−1−1−1]B. This means that the generated Ga particles can form nucleation sites for possible nanowire... (More)

For the purpose of functionalizing III-V semiconductor nanowires using n-doping, Sn-doped GaAs zincblende nanowires are produced, using the growth method of Aerotaxy. The growth conditions used are such that Ga droplets, formed on the nanowire surface, increase in number and concentrations when the Sn-precursor concentration is increased. Droplet-covered wires grown with varying Sn concentrations are analyzed by transmission electron microscopy and electron tomography, which together establish the positioning of the droplets to be preferentially on {−111}B facets. These facets have the same polarity as the main wire growth direction, [−1−1−1]B. This means that the generated Ga particles can form nucleation sites for possible nanowire branch growth. The concept of azimuthal mapping is introduced as a useful tool for nanowire surface visualization and evaluation. It is demonstrated here that electron tomography is useful in revealing both the surface and internal morphologies of the nanowires, opening up for applications in the analysis of more structurally complicated systems like radially asymmetrical nanowires. The analysis also gives a further understanding of the limits of the dopants which can be used for Aerotaxy nanowires.

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author
; ; ; ; and
organization
publishing date
type
Contribution to journal
publication status
published
subject
keywords
Aerotaxy, electron tomography, high-resolution electron microscopy, nanostructures, nanowires
in
Small
volume
14
issue
33
article number
1801285
publisher
John Wiley & Sons Inc.
external identifiers
  • scopus:85050803035
  • pmid:30003665
ISSN
1613-6810
DOI
10.1002/smll.201801285
language
English
LU publication?
yes
id
baef67bd-8209-426e-97b0-cdfbfacae62b
date added to LUP
2018-09-26 14:15:22
date last changed
2024-07-08 19:18:31
@article{baef67bd-8209-426e-97b0-cdfbfacae62b,
  abstract     = {{<p>For the purpose of functionalizing III-V semiconductor nanowires using n-doping, Sn-doped GaAs zincblende nanowires are produced, using the growth method of Aerotaxy. The growth conditions used are such that Ga droplets, formed on the nanowire surface, increase in number and concentrations when the Sn-precursor concentration is increased. Droplet-covered wires grown with varying Sn concentrations are analyzed by transmission electron microscopy and electron tomography, which together establish the positioning of the droplets to be preferentially on {−111}B facets. These facets have the same polarity as the main wire growth direction, [−1−1−1]B. This means that the generated Ga particles can form nucleation sites for possible nanowire branch growth. The concept of azimuthal mapping is introduced as a useful tool for nanowire surface visualization and evaluation. It is demonstrated here that electron tomography is useful in revealing both the surface and internal morphologies of the nanowires, opening up for applications in the analysis of more structurally complicated systems like radially asymmetrical nanowires. The analysis also gives a further understanding of the limits of the dopants which can be used for Aerotaxy nanowires.</p>}},
  author       = {{Persson, Axel R. and Metaferia, Wondwosen and Sivakumar, Sudhakar and Samuelson, Lars and Magnusson, Martin H. and Wallenberg, Reine}},
  issn         = {{1613-6810}},
  keywords     = {{Aerotaxy; electron tomography; high-resolution electron microscopy; nanostructures; nanowires}},
  language     = {{eng}},
  month        = {{08}},
  number       = {{33}},
  publisher    = {{John Wiley & Sons Inc.}},
  series       = {{Small}},
  title        = {{Electron Tomography Reveals the Droplet Covered Surface Structure of Nanowires Grown by Aerotaxy}},
  url          = {{http://dx.doi.org/10.1002/smll.201801285}},
  doi          = {{10.1002/smll.201801285}},
  volume       = {{14}},
  year         = {{2018}},
}