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Imaging Atomic Scale Dynamics on III-V Nanowire Surfaces during Electrical Operation

Webb, J. L. LU ; Knutsson, J. LU ; Hjort, M. LU ; McKibbin, S. R. LU ; Lehmann, S. LU ; Thelander, C. LU ; Dick, K. A. LU ; Timm, R. LU and Mikkelsen, A. LU (2017) In Scientific Reports 7(1).
Abstract

As semiconductor electronics keep shrinking, functionality depends on individual atomic scale surface and interface features that may change as voltages are applied. In this work we demonstrate a novel device platform that allows scanning tunneling microscopy (STM) imaging with atomic scale resolution across a device simultaneously with full electrical operation. The platform presents a significant step forward as it allows STM to be performed everywhere on the device surface and high temperature processing in reactive gases of the complete device. We demonstrate the new method through proof of principle measurements on both InAs and GaAs nanowire devices with variable biases up to 4 V. On InAs nanowires we observe a surprising removal... (More)

As semiconductor electronics keep shrinking, functionality depends on individual atomic scale surface and interface features that may change as voltages are applied. In this work we demonstrate a novel device platform that allows scanning tunneling microscopy (STM) imaging with atomic scale resolution across a device simultaneously with full electrical operation. The platform presents a significant step forward as it allows STM to be performed everywhere on the device surface and high temperature processing in reactive gases of the complete device. We demonstrate the new method through proof of principle measurements on both InAs and GaAs nanowire devices with variable biases up to 4 V. On InAs nanowires we observe a surprising removal of atomic defects and smoothing of the surface morphology under applied bias, in contrast to the expected increase in defects and electromigration-related failure. As we use only standard fabrication and scanning instrumentation our concept is widely applicable and opens up the possibility of fundamental investigations of device surface reliability as well as new electronic functionality based on restructuring during operation.

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author
organization
publishing date
type
Contribution to journal
publication status
published
subject
in
Scientific Reports
volume
7
issue
1
publisher
Nature Publishing Group
external identifiers
  • scopus:85030759562
  • wos:000412492400016
ISSN
2045-2322
DOI
10.1038/s41598-017-13007-w
language
English
LU publication?
yes
id
bbc025f7-df61-4016-bd37-eac3a5ef69a6
date added to LUP
2017-10-18 07:32:32
date last changed
2018-01-16 13:23:29
@article{bbc025f7-df61-4016-bd37-eac3a5ef69a6,
  abstract     = {<p>As semiconductor electronics keep shrinking, functionality depends on individual atomic scale surface and interface features that may change as voltages are applied. In this work we demonstrate a novel device platform that allows scanning tunneling microscopy (STM) imaging with atomic scale resolution across a device simultaneously with full electrical operation. The platform presents a significant step forward as it allows STM to be performed everywhere on the device surface and high temperature processing in reactive gases of the complete device. We demonstrate the new method through proof of principle measurements on both InAs and GaAs nanowire devices with variable biases up to 4 V. On InAs nanowires we observe a surprising removal of atomic defects and smoothing of the surface morphology under applied bias, in contrast to the expected increase in defects and electromigration-related failure. As we use only standard fabrication and scanning instrumentation our concept is widely applicable and opens up the possibility of fundamental investigations of device surface reliability as well as new electronic functionality based on restructuring during operation.</p>},
  articleno    = {12790},
  author       = {Webb, J. L. and Knutsson, J. and Hjort, M. and McKibbin, S. R. and Lehmann, S. and Thelander, C. and Dick, K. A. and Timm, R. and Mikkelsen, A.},
  issn         = {2045-2322},
  language     = {eng},
  month        = {12},
  number       = {1},
  publisher    = {Nature Publishing Group},
  series       = {Scientific Reports},
  title        = {Imaging Atomic Scale Dynamics on III-V Nanowire Surfaces during Electrical Operation},
  url          = {http://dx.doi.org/10.1038/s41598-017-13007-w},
  volume       = {7},
  year         = {2017},
}