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Atomic layer etching of gallium nitride (0001)

Kauppinen, Christoffer ; Khan, Sabbir Ahmed ; Sundqvist, Jonas LU ; Suyatin, Dmitry B. LU orcid ; Suihkonen, Sami ; Kauppinen, Esko I. and Sopanen, Markku (2017) In Journal of Vacuum Science and Technology A 35(6).
Abstract

In this work, atomic layer etching (ALE) of thin film Ga-polar GaN(0001) is reported in detail using sequential surface modification by Cl2 adsorption and removal of the modified surface layer by low energy Ar plasma exposure in a standard reactive ion etching system. The feasibility and reproducibility of the process are demonstrated by patterning GaN(0001) films by the ALE process using photoresist as an etch mask. The demonstrated ALE is deemed to be useful for the fabrication of nanoscale structures and high electron mobility transistors and expected to be adoptable for ALE of other materials.

Please use this url to cite or link to this publication:
author
; ; ; ; ; and
organization
publishing date
type
Contribution to journal
publication status
published
subject
in
Journal of Vacuum Science and Technology A
volume
35
issue
6
article number
060603
publisher
American Institute of Physics (AIP)
external identifiers
  • scopus:85027715139
  • wos:000415685300003
ISSN
0734-2101
DOI
10.1116/1.4993996
language
English
LU publication?
yes
id
bdb87866-96a1-405a-9f15-24adeda19353
date added to LUP
2017-09-06 10:07:08
date last changed
2025-01-07 20:22:26
@article{bdb87866-96a1-405a-9f15-24adeda19353,
  abstract     = {{<p>In this work, atomic layer etching (ALE) of thin film Ga-polar GaN(0001) is reported in detail using sequential surface modification by Cl<sub>2</sub> adsorption and removal of the modified surface layer by low energy Ar plasma exposure in a standard reactive ion etching system. The feasibility and reproducibility of the process are demonstrated by patterning GaN(0001) films by the ALE process using photoresist as an etch mask. The demonstrated ALE is deemed to be useful for the fabrication of nanoscale structures and high electron mobility transistors and expected to be adoptable for ALE of other materials.</p>}},
  author       = {{Kauppinen, Christoffer and Khan, Sabbir Ahmed and Sundqvist, Jonas and Suyatin, Dmitry B. and Suihkonen, Sami and Kauppinen, Esko I. and Sopanen, Markku}},
  issn         = {{0734-2101}},
  language     = {{eng}},
  month        = {{11}},
  number       = {{6}},
  publisher    = {{American Institute of Physics (AIP)}},
  series       = {{Journal of Vacuum Science and Technology A}},
  title        = {{Atomic layer etching of gallium nitride (0001)}},
  url          = {{http://dx.doi.org/10.1116/1.4993996}},
  doi          = {{10.1116/1.4993996}},
  volume       = {{35}},
  year         = {{2017}},
}