Heterostructures incorporated in one-dimensional semiconductor materials and devices
(2003) 171. p.253-260- Abstract
- As an alternative to traditional top-down techniques for fabrication of one-dimensional devices we here report an approach wherein a bottom-up technique is used to create one-dimensional device structures. We use the vapor-liquid-solid growth method, in which a catalytically active gold nanoparticle forms a eutectic alloy with the nanowire constituents. Our method of growth allows atomically abrupt interfaces between different III-V semiconductors, also for highly mismatched combinations for which conventional growth techniques can not be used. Special emphasis is put on the processing of ohmic contacts to nanowires. We describe the transport properties of nanowires containing heterostructures from which band off-sets between two different... (More)
- As an alternative to traditional top-down techniques for fabrication of one-dimensional devices we here report an approach wherein a bottom-up technique is used to create one-dimensional device structures. We use the vapor-liquid-solid growth method, in which a catalytically active gold nanoparticle forms a eutectic alloy with the nanowire constituents. Our method of growth allows atomically abrupt interfaces between different III-V semiconductors, also for highly mismatched combinations for which conventional growth techniques can not be used. Special emphasis is put on the processing of ohmic contacts to nanowires. We describe the transport properties of nanowires containing heterostructures from which band off-sets between two different binary materials are determined. Finally, we report the creation of double-barrier resonant tunneling diodes in which a single InAs quantum dot surrounded by InP tunnel barriers acts as the active element in the device, resulting in energetically sharp resonant tunneling peaks reflecting tunneling into zero-dimensional states of the quantum dot. (Less)
Please use this url to cite or link to this publication:
https://lup.lub.lu.se/record/529967
- author
- Thelander, Claes LU ; Björk, Mikael LU ; Persson, Ann LU ; Ohlsson, BJ ; Sass, T ; Wallenberg, Reine LU and Samuelson, Lars LU
- organization
- publishing date
- 2003
- type
- Chapter in Book/Report/Conference proceeding
- publication status
- published
- subject
- host publication
- Physics and Semiconductors 2002 : Proceedings of the 26th International Conference on the Physics of Semiconductors
- volume
- 171
- pages
- 253 - 260
- publisher
- Inst of Physics Pub Inc
- external identifiers
-
- wos:000222945600030
- scopus:4944226163
- ISBN
- 0750309245
- language
- English
- LU publication?
- yes
- additional info
- The information about affiliations in this record was updated in December 2015. The record was previously connected to the following departments: Polymer and Materials Chemistry (LTH) (011001041), Solid State Physics (011013006)
- id
- c030200e-4ea6-49d7-b9d0-2aff8632dd4f (old id 529967)
- alternative location
- http://bookweb.kinokuniya.co.jp/htmy/0750309245.html
- date added to LUP
- 2016-04-04 10:00:51
- date last changed
- 2022-04-23 22:21:48
@inbook{c030200e-4ea6-49d7-b9d0-2aff8632dd4f,
abstract = {{As an alternative to traditional top-down techniques for fabrication of one-dimensional devices we here report an approach wherein a bottom-up technique is used to create one-dimensional device structures. We use the vapor-liquid-solid growth method, in which a catalytically active gold nanoparticle forms a eutectic alloy with the nanowire constituents. Our method of growth allows atomically abrupt interfaces between different III-V semiconductors, also for highly mismatched combinations for which conventional growth techniques can not be used. Special emphasis is put on the processing of ohmic contacts to nanowires. We describe the transport properties of nanowires containing heterostructures from which band off-sets between two different binary materials are determined. Finally, we report the creation of double-barrier resonant tunneling diodes in which a single InAs quantum dot surrounded by InP tunnel barriers acts as the active element in the device, resulting in energetically sharp resonant tunneling peaks reflecting tunneling into zero-dimensional states of the quantum dot.}},
author = {{Thelander, Claes and Björk, Mikael and Persson, Ann and Ohlsson, BJ and Sass, T and Wallenberg, Reine and Samuelson, Lars}},
booktitle = {{Physics and Semiconductors 2002 : Proceedings of the 26th International Conference on the Physics of Semiconductors}},
isbn = {{0750309245}},
language = {{eng}},
pages = {{253--260}},
publisher = {{Inst of Physics Pub Inc}},
title = {{Heterostructures incorporated in one-dimensional semiconductor materials and devices}},
url = {{http://bookweb.kinokuniya.co.jp/htmy/0750309245.html}},
volume = {{171}},
year = {{2003}},
}