High Transconductance, f(t) and f(max) in In0.63Ga0.37As FinFETs Using A Novel Fin Formation Technique
(2014) 26th International Conference on Indium Phosphide and Related Materials (IPRM)- Abstract
- We report on In0.63Ga0.37As FinFETs utilizing nanowires grown by selective-area growth as channel. These nanowires are defined by crystallographic planes rather than pattern transfer using etching. The fabricated devices exhibit maximum transconductance g(m,max) = 2.05 mS/um at V-ds = 0.5 V, as well as record-high extrapolated f(t) = 300 GHz and f(max) = 342 GHz, on the non-planar III-V MOSFET platform.
Please use this url to cite or link to this publication:
https://lup.lub.lu.se/record/4962496
- author
- Zota, Cezar LU ; Wernersson, Lars-Erik LU and Lind, Erik LU
- organization
- publishing date
- 2014
- type
- Chapter in Book/Report/Conference proceeding
- publication status
- published
- subject
- host publication
- 26th International Conference on Indium Phosphide and Related Materials (IPRM)
- publisher
- IEEE - Institute of Electrical and Electronics Engineers Inc.
- conference name
- 26th International Conference on Indium Phosphide and Related Materials (IPRM)
- conference dates
- 2014-05-11 - 2014-05-15
- external identifiers
-
- wos:000346124000054
- scopus:84906751194
- ISSN
- 1092-8669
- DOI
- 10.1109/ICIPRM.2014.6880567
- language
- English
- LU publication?
- yes
- id
- c374da6e-db8f-400d-9f64-8d46068f6abe (old id 4962496)
- date added to LUP
- 2016-04-01 13:36:46
- date last changed
- 2024-01-09 16:03:28
@inproceedings{c374da6e-db8f-400d-9f64-8d46068f6abe, abstract = {{We report on In0.63Ga0.37As FinFETs utilizing nanowires grown by selective-area growth as channel. These nanowires are defined by crystallographic planes rather than pattern transfer using etching. The fabricated devices exhibit maximum transconductance g(m,max) = 2.05 mS/um at V-ds = 0.5 V, as well as record-high extrapolated f(t) = 300 GHz and f(max) = 342 GHz, on the non-planar III-V MOSFET platform.}}, author = {{Zota, Cezar and Wernersson, Lars-Erik and Lind, Erik}}, booktitle = {{26th International Conference on Indium Phosphide and Related Materials (IPRM)}}, issn = {{1092-8669}}, language = {{eng}}, publisher = {{IEEE - Institute of Electrical and Electronics Engineers Inc.}}, title = {{High Transconductance, f(t) and f(max) in In0.63Ga0.37As FinFETs Using A Novel Fin Formation Technique}}, url = {{http://dx.doi.org/10.1109/ICIPRM.2014.6880567}}, doi = {{10.1109/ICIPRM.2014.6880567}}, year = {{2014}}, }