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N-polar AlN nucleation layers grown by hot-wall MOCVD on SiC : Effects of substrate orientation on the polarity, surface morphology and crystal quality

Zhang, Hengfang ; Paskov, Plamen P. ; Kordina, Olof ; Chen, Jr Tai and Darakchieva, Vanya LU (2020) In Physica B: Condensed Matter 580.
Abstract

Hot-wall metalorganic vapor phase epitaxy enables a superior quality of group-III nitride epitaxial layers and high electron mobility transistor structures, but has not yet been explored for N-polar growth. In this work, we aim at achieving N-polar AlN nucleation layers (NLs) with optimized properties for subsequent growth of GaN device heterostructures. The effects of substrate orientation on the polarity, surface morphology and crystalline quality of AlN NLs on on-axis C-face SiC (0001̄), C-face SiC (0001̄) off-cut towards the [112̄0] by 4°, and Si-face SiC (0001) are investigated. The results are discussed in view of growth mode evolution with growth temperature and substrate orientation. It is demonstrated that N-polar AlN NLs with... (More)

Hot-wall metalorganic vapor phase epitaxy enables a superior quality of group-III nitride epitaxial layers and high electron mobility transistor structures, but has not yet been explored for N-polar growth. In this work, we aim at achieving N-polar AlN nucleation layers (NLs) with optimized properties for subsequent growth of GaN device heterostructures. The effects of substrate orientation on the polarity, surface morphology and crystalline quality of AlN NLs on on-axis C-face SiC (0001̄), C-face SiC (0001̄) off-cut towards the [112̄0] by 4°, and Si-face SiC (0001) are investigated. The results are discussed in view of growth mode evolution with growth temperature and substrate orientation. It is demonstrated that N-polar AlN NLs with step-flow growth mode and 0002 rocking curve widths below 20 arcsec can be achieved on off-axis C-face SiC substrates.

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author
; ; ; and
publishing date
type
Contribution to journal
publication status
published
subject
keywords
AlN nucleation layer, Hot-wall, MOCVD, Nitrogen-polar, Substrate orientation effect
in
Physica B: Condensed Matter
volume
580
article number
411819
publisher
Elsevier
external identifiers
  • scopus:85074523153
ISSN
0921-4526
DOI
10.1016/j.physb.2019.411819
language
English
LU publication?
no
additional info
Publisher Copyright: © 2019 Elsevier B.V.
id
c48161ab-70eb-44ab-b983-93a255727fba
date added to LUP
2025-11-06 16:40:12
date last changed
2025-11-11 14:24:58
@article{c48161ab-70eb-44ab-b983-93a255727fba,
  abstract     = {{<p>Hot-wall metalorganic vapor phase epitaxy enables a superior quality of group-III nitride epitaxial layers and high electron mobility transistor structures, but has not yet been explored for N-polar growth. In this work, we aim at achieving N-polar AlN nucleation layers (NLs) with optimized properties for subsequent growth of GaN device heterostructures. The effects of substrate orientation on the polarity, surface morphology and crystalline quality of AlN NLs on on-axis C-face SiC (0001̄), C-face SiC (0001̄) off-cut towards the [112̄0] by 4°, and Si-face SiC (0001) are investigated. The results are discussed in view of growth mode evolution with growth temperature and substrate orientation. It is demonstrated that N-polar AlN NLs with step-flow growth mode and 0002 rocking curve widths below 20 arcsec can be achieved on off-axis C-face SiC substrates.</p>}},
  author       = {{Zhang, Hengfang and Paskov, Plamen P. and Kordina, Olof and Chen, Jr Tai and Darakchieva, Vanya}},
  issn         = {{0921-4526}},
  keywords     = {{AlN nucleation layer; Hot-wall; MOCVD; Nitrogen-polar; Substrate orientation effect}},
  language     = {{eng}},
  month        = {{03}},
  publisher    = {{Elsevier}},
  series       = {{Physica B: Condensed Matter}},
  title        = {{N-polar AlN nucleation layers grown by hot-wall MOCVD on SiC : Effects of substrate orientation on the polarity, surface morphology and crystal quality}},
  url          = {{http://dx.doi.org/10.1016/j.physb.2019.411819}},
  doi          = {{10.1016/j.physb.2019.411819}},
  volume       = {{580}},
  year         = {{2020}},
}