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2020
Mark N-polar AlN nucleation layers grown by hot-wall MOCVD on SiC : Effects of substrate orientation on the polarity, surface morphology and crystal quality
Zhang, Hengfang ; Paskov, Plamen P. ; Kordina, Olof ; Chen, Jr Tai and Darakchieva, Vanya ^LU (2020) In Physica B: Condensed Matter 580.
- Contribution to journal › Article