Direct Imaging of Atomic Scale Structure and Electronic Properties of GaAs Wurtzite and Zinc Blende Nanowire Surfaces.
(2013) In Nano Letters 13(9). p.4492-4498- Abstract
- Using scanning tunneling microscopy and spectroscopy we study the atomic scale geometry and electronic structure of GaAs nanowires exhibiting controlled axial stacking of wurtzite (Wz) and zinc blende (Zb) crystal segments. We find that the nonpolar low-index surfaces {110}, {101̅0}, and {112̅0} are unreconstructed, unpinned, and without states in the band gap region. Direct comparison between Wz and Zb GaAs reveal a type-II band alignment and a Wz GaAs band gap of 1.52 eV.
Please use this url to cite or link to this publication:
https://lup.lub.lu.se/record/4005771
- author
- Hjort, Martin LU ; Lehmann, Sebastian LU ; Knutsson, Johan LU ; Timm, Rainer LU ; Jacobsson, Daniel LU ; Lundgren, Edvin LU ; Dick Thelander, Kimberly LU and Mikkelsen, Anders LU
- organization
- publishing date
- 2013
- type
- Contribution to journal
- publication status
- published
- subject
- in
- Nano Letters
- volume
- 13
- issue
- 9
- pages
- 4492 - 4498
- publisher
- The American Chemical Society (ACS)
- external identifiers
-
- wos:000330158900083
- pmid:23941328
- scopus:84884268020
- pmid:23941328
- ISSN
- 1530-6992
- DOI
- 10.1021/nl402424x
- language
- English
- LU publication?
- yes
- additional info
- The information about affiliations in this record was updated in December 2015. The record was previously connected to the following departments: Synchrotron Radiation Research (011013009), Solid State Physics (011013006), Polymer and Materials Chemistry (LTH) (011001041)
- id
- c62ae052-d801-4061-8a0b-3bdd8bc99a4b (old id 4005771)
- date added to LUP
- 2016-04-01 11:09:16
- date last changed
- 2023-11-10 13:49:46
@article{c62ae052-d801-4061-8a0b-3bdd8bc99a4b, abstract = {{Using scanning tunneling microscopy and spectroscopy we study the atomic scale geometry and electronic structure of GaAs nanowires exhibiting controlled axial stacking of wurtzite (Wz) and zinc blende (Zb) crystal segments. We find that the nonpolar low-index surfaces {110}, {101̅0}, and {112̅0} are unreconstructed, unpinned, and without states in the band gap region. Direct comparison between Wz and Zb GaAs reveal a type-II band alignment and a Wz GaAs band gap of 1.52 eV.}}, author = {{Hjort, Martin and Lehmann, Sebastian and Knutsson, Johan and Timm, Rainer and Jacobsson, Daniel and Lundgren, Edvin and Dick Thelander, Kimberly and Mikkelsen, Anders}}, issn = {{1530-6992}}, language = {{eng}}, number = {{9}}, pages = {{4492--4498}}, publisher = {{The American Chemical Society (ACS)}}, series = {{Nano Letters}}, title = {{Direct Imaging of Atomic Scale Structure and Electronic Properties of GaAs Wurtzite and Zinc Blende Nanowire Surfaces.}}, url = {{http://dx.doi.org/10.1021/nl402424x}}, doi = {{10.1021/nl402424x}}, volume = {{13}}, year = {{2013}}, }