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Direct Imaging of Atomic Scale Structure and Electronic Properties of GaAs Wurtzite and Zinc Blende Nanowire Surfaces.

Hjort, Martin LU orcid ; Lehmann, Sebastian LU ; Knutsson, Johan LU ; Timm, Rainer LU orcid ; Jacobsson, Daniel LU ; Lundgren, Edvin LU ; Dick Thelander, Kimberly LU and Mikkelsen, Anders LU (2013) In Nano Letters 13(9). p.4492-4498
Abstract
Using scanning tunneling microscopy and spectroscopy we study the atomic scale geometry and electronic structure of GaAs nanowires exhibiting controlled axial stacking of wurtzite (Wz) and zinc blende (Zb) crystal segments. We find that the nonpolar low-index surfaces {110}, {101̅0}, and {112̅0} are unreconstructed, unpinned, and without states in the band gap region. Direct comparison between Wz and Zb GaAs reveal a type-II band alignment and a Wz GaAs band gap of 1.52 eV.
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author
; ; ; ; ; ; and
organization
publishing date
type
Contribution to journal
publication status
published
subject
in
Nano Letters
volume
13
issue
9
pages
4492 - 4498
publisher
The American Chemical Society (ACS)
external identifiers
  • wos:000330158900083
  • pmid:23941328
  • scopus:84884268020
  • pmid:23941328
ISSN
1530-6992
DOI
10.1021/nl402424x
language
English
LU publication?
yes
additional info
The information about affiliations in this record was updated in December 2015. The record was previously connected to the following departments: Synchrotron Radiation Research (011013009), Solid State Physics (011013006), Polymer and Materials Chemistry (LTH) (011001041)
id
c62ae052-d801-4061-8a0b-3bdd8bc99a4b (old id 4005771)
date added to LUP
2016-04-01 11:09:16
date last changed
2023-11-10 13:49:46
@article{c62ae052-d801-4061-8a0b-3bdd8bc99a4b,
  abstract     = {{Using scanning tunneling microscopy and spectroscopy we study the atomic scale geometry and electronic structure of GaAs nanowires exhibiting controlled axial stacking of wurtzite (Wz) and zinc blende (Zb) crystal segments. We find that the nonpolar low-index surfaces {110}, {101̅0}, and {112̅0} are unreconstructed, unpinned, and without states in the band gap region. Direct comparison between Wz and Zb GaAs reveal a type-II band alignment and a Wz GaAs band gap of 1.52 eV.}},
  author       = {{Hjort, Martin and Lehmann, Sebastian and Knutsson, Johan and Timm, Rainer and Jacobsson, Daniel and Lundgren, Edvin and Dick Thelander, Kimberly and Mikkelsen, Anders}},
  issn         = {{1530-6992}},
  language     = {{eng}},
  number       = {{9}},
  pages        = {{4492--4498}},
  publisher    = {{The American Chemical Society (ACS)}},
  series       = {{Nano Letters}},
  title        = {{Direct Imaging of Atomic Scale Structure and Electronic Properties of GaAs Wurtzite and Zinc Blende Nanowire Surfaces.}},
  url          = {{http://dx.doi.org/10.1021/nl402424x}},
  doi          = {{10.1021/nl402424x}},
  volume       = {{13}},
  year         = {{2013}},
}