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Atomic Hydrogen Annealing of Graphene on InAs Surfaces and Nanowires : Interface and Morphology Control for Optoelectronics and Quantum Technologies

Mousavi, S. Fatemeh ; Liu, Yen Po LU ; D'Acunto, Giulio LU ; Troian, Andrea LU ; Caridad, José M. LU ; Niu, Yuran LU ; Zhu, Lin LU orcid ; Jash, Asmita LU ; Flodgren, Vidar LU and Lehmann, Sebastian LU , et al. (2022) In ACS Applied Nano Materials 5(12). p.17919-17927
Abstract

Folding two-dimensional graphene around one-dimensional III-V nanowires yields a new class of hybrid nanomaterials combining their excellent complementary properties. However, important for high-quality electrical and optical performance, needed in many applications, are well-controlled oxide-free interfaces and a tight folding morphology. To improve the interface chemistry between the graphene and InAs, we annealed the samples in atomic hydrogen. Using surface-sensitive imaging, we found that the III-V native oxides in the interface can be reduced at temperatures that maintain the graphene and the III-V nanostructures. Transferring both single- and multilayer graphene flakes onto InAs NWs, we found that single layers fold tightly... (More)

Folding two-dimensional graphene around one-dimensional III-V nanowires yields a new class of hybrid nanomaterials combining their excellent complementary properties. However, important for high-quality electrical and optical performance, needed in many applications, are well-controlled oxide-free interfaces and a tight folding morphology. To improve the interface chemistry between the graphene and InAs, we annealed the samples in atomic hydrogen. Using surface-sensitive imaging, we found that the III-V native oxides in the interface can be reduced at temperatures that maintain the graphene and the III-V nanostructures. Transferring both single- and multilayer graphene flakes onto InAs NWs, we found that single layers fold tightly around the NWs, while the multilayers fold weakly with a decline of only a few degrees. Annealing in atomic hydrogen further tightens the folding. Together, this indicates that high-quality morphological and chemical control of this hybrid material system is possible, opening for future devices for quantum technologies and optoelectronics.

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organization
publishing date
type
Contribution to journal
publication status
published
subject
keywords
AFM, graphene, hydrogen, InAs, LEEM, nanowires, oxide, semiconductors, XPEEM, XPS
in
ACS Applied Nano Materials
volume
5
issue
12
pages
9 pages
publisher
The American Chemical Society (ACS)
external identifiers
  • scopus:85142600678
ISSN
2574-0970
DOI
10.1021/acsanm.2c03891
language
English
LU publication?
yes
id
cd064d56-f906-4cd4-b9c0-e6071bffce53
date added to LUP
2023-01-25 11:25:38
date last changed
2023-11-21 06:00:42
@article{cd064d56-f906-4cd4-b9c0-e6071bffce53,
  abstract     = {{<p>Folding two-dimensional graphene around one-dimensional III-V nanowires yields a new class of hybrid nanomaterials combining their excellent complementary properties. However, important for high-quality electrical and optical performance, needed in many applications, are well-controlled oxide-free interfaces and a tight folding morphology. To improve the interface chemistry between the graphene and InAs, we annealed the samples in atomic hydrogen. Using surface-sensitive imaging, we found that the III-V native oxides in the interface can be reduced at temperatures that maintain the graphene and the III-V nanostructures. Transferring both single- and multilayer graphene flakes onto InAs NWs, we found that single layers fold tightly around the NWs, while the multilayers fold weakly with a decline of only a few degrees. Annealing in atomic hydrogen further tightens the folding. Together, this indicates that high-quality morphological and chemical control of this hybrid material system is possible, opening for future devices for quantum technologies and optoelectronics.</p>}},
  author       = {{Mousavi, S. Fatemeh and Liu, Yen Po and D'Acunto, Giulio and Troian, Andrea and Caridad, José M. and Niu, Yuran and Zhu, Lin and Jash, Asmita and Flodgren, Vidar and Lehmann, Sebastian and Dick, Kimberly A. and Zakharov, Alexei and Timm, Rainer and Mikkelsen, Anders}},
  issn         = {{2574-0970}},
  keywords     = {{AFM; graphene; hydrogen; InAs; LEEM; nanowires; oxide; semiconductors; XPEEM; XPS}},
  language     = {{eng}},
  month        = {{12}},
  number       = {{12}},
  pages        = {{17919--17927}},
  publisher    = {{The American Chemical Society (ACS)}},
  series       = {{ACS Applied Nano Materials}},
  title        = {{Atomic Hydrogen Annealing of Graphene on InAs Surfaces and Nanowires : Interface and Morphology Control for Optoelectronics and Quantum Technologies}},
  url          = {{http://dx.doi.org/10.1021/acsanm.2c03891}},
  doi          = {{10.1021/acsanm.2c03891}},
  volume       = {{5}},
  year         = {{2022}},
}