Skip to main content

Lund University Publications

LUND UNIVERSITY LIBRARIES

Epitaxial growth and surface studies of the Half Heusler compound NiTiSn (001)

Kawasaki, Jason K. ; Neulinger, Thomas ; Timm, Rainer LU orcid ; Hjort, Martin LU orcid ; Zakharov, Alexei LU ; Mikkelsen, Anders LU ; Schultz, Brian D. and Palmstrom, Chris J. (2013) In Journal of Vacuum Science and Technology B 31(4).
Abstract
The Half Heuslers are currently an attractive family of compounds for high temperature thermoelectrics research, and recently, there has been renewed interest since some of these compounds are proposed to be topological insulators. NiTiSn belongs to the family of 18 valence electron Half Heuslers that are predicted to be semiconducting, despite being composed entirely of metallic elements. The growth of the Half Heusler compound NiTiSn by molecular beam epitaxy is demonstrated. The NiTiSn films are epitaxial and single crystalline as observed by reflection high-energy electron diffraction and x-ray diffraction. Temperature dependent transport measurements suggest the films may be semiconducting, but with a high background carrier density... (More)
The Half Heuslers are currently an attractive family of compounds for high temperature thermoelectrics research, and recently, there has been renewed interest since some of these compounds are proposed to be topological insulators. NiTiSn belongs to the family of 18 valence electron Half Heuslers that are predicted to be semiconducting, despite being composed entirely of metallic elements. The growth of the Half Heusler compound NiTiSn by molecular beam epitaxy is demonstrated. The NiTiSn films are epitaxial and single crystalline as observed by reflection high-energy electron diffraction and x-ray diffraction. Temperature dependent transport measurements suggest the films may be semiconducting, but with a high background carrier density indicative of a high density of electrically active defect states. Methods of protecting the sample surface for synchrotron-based photoemission measurements are explored. These methods may be applied to the study of surface electronic structure in unconventional materials. (C) 2013 American Vacuum Society. (Less)
Please use this url to cite or link to this publication:
author
; ; ; ; ; ; and
organization
publishing date
type
Contribution to journal
publication status
published
subject
in
Journal of Vacuum Science and Technology B
volume
31
issue
4
article number
04D106
publisher
American Institute of Physics (AIP)
external identifiers
  • wos:000322379800006
  • scopus:84887460943
ISSN
1520-8567
DOI
10.1116/1.4807715
language
English
LU publication?
yes
id
cd7d6d3b-8f90-4821-87f9-149d33ada938 (old id 4043191)
date added to LUP
2016-04-01 11:00:38
date last changed
2023-08-31 16:45:16
@article{cd7d6d3b-8f90-4821-87f9-149d33ada938,
  abstract     = {{The Half Heuslers are currently an attractive family of compounds for high temperature thermoelectrics research, and recently, there has been renewed interest since some of these compounds are proposed to be topological insulators. NiTiSn belongs to the family of 18 valence electron Half Heuslers that are predicted to be semiconducting, despite being composed entirely of metallic elements. The growth of the Half Heusler compound NiTiSn by molecular beam epitaxy is demonstrated. The NiTiSn films are epitaxial and single crystalline as observed by reflection high-energy electron diffraction and x-ray diffraction. Temperature dependent transport measurements suggest the films may be semiconducting, but with a high background carrier density indicative of a high density of electrically active defect states. Methods of protecting the sample surface for synchrotron-based photoemission measurements are explored. These methods may be applied to the study of surface electronic structure in unconventional materials. (C) 2013 American Vacuum Society.}},
  author       = {{Kawasaki, Jason K. and Neulinger, Thomas and Timm, Rainer and Hjort, Martin and Zakharov, Alexei and Mikkelsen, Anders and Schultz, Brian D. and Palmstrom, Chris J.}},
  issn         = {{1520-8567}},
  language     = {{eng}},
  number       = {{4}},
  publisher    = {{American Institute of Physics (AIP)}},
  series       = {{Journal of Vacuum Science and Technology B}},
  title        = {{Epitaxial growth and surface studies of the Half Heusler compound NiTiSn (001)}},
  url          = {{http://dx.doi.org/10.1116/1.4807715}},
  doi          = {{10.1116/1.4807715}},
  volume       = {{31}},
  year         = {{2013}},
}