Electrochemical etch-stop technique for silicon membranes with p- and n-type regions and its application to neural sieve electrodes
(2002) In Journal of Micromechanics and Microengineering 12(3). p.265-270- Abstract
- In this study the field effects on electrochemic ally controlled silicon etching in KOH during three- and four-electrode pn etch-stop have been investigated. When a p-doped bulk area is surrounded by n-doped silicon and the n-doped silicon is electrochemic ally passivated, small lines of bulk silicon in between the n-doped silicon would not etch. The size of the bulk silicon that did not etch could be moderated by the applied potential on the n-doped silicon during pn etching. For the three-electrode system the size of the electric field passivated bulk silicon could be controlled for line widths ranging between 60 and 100 mum. When a four-electrode system was used and the p-doped bulk silicon was forced to a more negative potential, it... (More)
- In this study the field effects on electrochemic ally controlled silicon etching in KOH during three- and four-electrode pn etch-stop have been investigated. When a p-doped bulk area is surrounded by n-doped silicon and the n-doped silicon is electrochemic ally passivated, small lines of bulk silicon in between the n-doped silicon would not etch. The size of the bulk silicon that did not etch could be moderated by the applied potential on the n-doped silicon during pn etching. For the three-electrode system the size of the electric field passivated bulk silicon could be controlled for line widths ranging between 60 and 100 mum. When a four-electrode system was used and the p-doped bulk silicon was forced to a more negative potential, it was possible to etch lines of bulk silicon down to 40 mum widths. This field-restricted pn etch-stop can be used for fabricating thin membrane structures with densely spaced n-doped regions that can be individually addressed by electronics. One application is the fabrication of neural sieve electrodes which comprise a pn etch-stopped membrane containing several phosphorous-doped individually addressable recording electrodes. (Less)
Please use this url to cite or link to this publication:
https://lup.lub.lu.se/record/336014
- author
- Wallman, Lars LU ; Bengtsson, Jonas LU ; Danielsen, Nils LU and Laurell, Thomas LU
- organization
- publishing date
- 2002
- type
- Contribution to journal
- publication status
- published
- subject
- in
- Journal of Micromechanics and Microengineering
- volume
- 12
- issue
- 3
- pages
- 265 - 270
- publisher
- IOP Publishing
- external identifiers
-
- wos:000176057700011
- scopus:0036571726
- ISSN
- 0960-1317
- DOI
- 10.1088/0960-1317/12/3/311
- language
- English
- LU publication?
- yes
- id
- cdcd3850-8c48-4df6-a4d2-523c1f520aa1 (old id 336014)
- date added to LUP
- 2016-04-01 16:55:34
- date last changed
- 2022-03-30 19:15:34
@article{cdcd3850-8c48-4df6-a4d2-523c1f520aa1,
abstract = {{In this study the field effects on electrochemic ally controlled silicon etching in KOH during three- and four-electrode pn etch-stop have been investigated. When a p-doped bulk area is surrounded by n-doped silicon and the n-doped silicon is electrochemic ally passivated, small lines of bulk silicon in between the n-doped silicon would not etch. The size of the bulk silicon that did not etch could be moderated by the applied potential on the n-doped silicon during pn etching. For the three-electrode system the size of the electric field passivated bulk silicon could be controlled for line widths ranging between 60 and 100 mum. When a four-electrode system was used and the p-doped bulk silicon was forced to a more negative potential, it was possible to etch lines of bulk silicon down to 40 mum widths. This field-restricted pn etch-stop can be used for fabricating thin membrane structures with densely spaced n-doped regions that can be individually addressed by electronics. One application is the fabrication of neural sieve electrodes which comprise a pn etch-stopped membrane containing several phosphorous-doped individually addressable recording electrodes.}},
author = {{Wallman, Lars and Bengtsson, Jonas and Danielsen, Nils and Laurell, Thomas}},
issn = {{0960-1317}},
language = {{eng}},
number = {{3}},
pages = {{265--270}},
publisher = {{IOP Publishing}},
series = {{Journal of Micromechanics and Microengineering}},
title = {{Electrochemical etch-stop technique for silicon membranes with p- and n-type regions and its application to neural sieve electrodes}},
url = {{http://dx.doi.org/10.1088/0960-1317/12/3/311}},
doi = {{10.1088/0960-1317/12/3/311}},
volume = {{12}},
year = {{2002}},
}