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Time-dependent relaxation of strained silicon-on-insulator lines using a partially coherent x-ray nanobeam

Mastropietro, F. ; Eymery, J. ; Carbone, G. LU ; Baudot, S. ; Andrieu, F. and Favre-Nicolin, V. (2013) In Physical Review Letters 111(21).
Abstract

We report on the quantitative determination of the strain map in a strained silicon-on-insulator line with a 200×70 nm2 cross section. In order to study a single line as a function of time, we used an x-ray nanobeam with relaxed coherence properties as a compromise between beam size, coherence, and intensity. We demonstrate how it is possible to refine the line deformation map at the nanoscale, and follow its evolution as the line relaxes under the influence of the x-ray nanobeam. We find that the strained line flattens itself under irradiation but maintains the same linear strain (Ïμzz unchanged).

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author
; ; ; ; and
publishing date
type
Contribution to journal
publication status
published
in
Physical Review Letters
volume
111
issue
21
article number
215502
publisher
American Physical Society
external identifiers
  • scopus:84888391419
ISSN
0031-9007
DOI
10.1103/PhysRevLett.111.215502
language
English
LU publication?
no
id
d1e67f5e-fe44-4f6a-b4d2-c19bb60ecacc
date added to LUP
2021-12-15 11:41:19
date last changed
2022-04-03 22:29:55
@article{d1e67f5e-fe44-4f6a-b4d2-c19bb60ecacc,
  abstract     = {{<p>We report on the quantitative determination of the strain map in a strained silicon-on-insulator line with a 200×70 nm2 cross section. In order to study a single line as a function of time, we used an x-ray nanobeam with relaxed coherence properties as a compromise between beam size, coherence, and intensity. We demonstrate how it is possible to refine the line deformation map at the nanoscale, and follow its evolution as the line relaxes under the influence of the x-ray nanobeam. We find that the strained line flattens itself under irradiation but maintains the same linear strain (Ïμ<sub>zz</sub> unchanged).</p>}},
  author       = {{Mastropietro, F. and Eymery, J. and Carbone, G. and Baudot, S. and Andrieu, F. and Favre-Nicolin, V.}},
  issn         = {{0031-9007}},
  language     = {{eng}},
  month        = {{11}},
  number       = {{21}},
  publisher    = {{American Physical Society}},
  series       = {{Physical Review Letters}},
  title        = {{Time-dependent relaxation of strained silicon-on-insulator lines using a partially coherent x-ray nanobeam}},
  url          = {{http://dx.doi.org/10.1103/PhysRevLett.111.215502}},
  doi          = {{10.1103/PhysRevLett.111.215502}},
  volume       = {{111}},
  year         = {{2013}},
}