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In situ metal-organic chemical vapour deposition growth of III–V semiconductor nanowires in the Lund environmental transmission electron microscope

Wallenberg, Reine LU ; Hetherington, Crispin LU ; Dick, Kimberly LU and Jacobsson, Daniel LU (2020) In Semiconductor Science and Technology 35(3).
Abstract
A new environmental transmission electron microscope has been installed in Lund in order to investigate the growth of III-V semiconductor nanowires by metal-organic chemical vapour deposition. We report here on the concepts behind the design of the facility and on details of the operation, and we refer to early results to highlight the new information that can be accessed from in situ studies. The installation includes a gas handling system that delivers the precursors to III-V semiconductor growth under controlled conditions. The core microscope is a Hitachi HF-3300S 300 kV TEM with additional pumping that can handle up to 6 Pa of gas injected into the specimen area, or up to 400 Pa if an apertured lid is fitted to the holder. Various... (More)
A new environmental transmission electron microscope has been installed in Lund in order to investigate the growth of III-V semiconductor nanowires by metal-organic chemical vapour deposition. We report here on the concepts behind the design of the facility and on details of the operation, and we refer to early results to highlight the new information that can be accessed from in situ studies. The installation includes a gas handling system that delivers the precursors to III-V semiconductor growth under controlled conditions. The core microscope is a Hitachi HF-3300S 300 kV TEM with additional pumping that can handle up to 6 Pa of gas injected into the specimen area, or up to 400 Pa if an apertured lid is fitted to the holder. Various custom specimen holders incorporate precursor gas lines, a heating chip or a double tilt mechanism. The polepiece gap has been expanded to accommodate the holders, while the combination of an imaging aberration corrector and a cold field emission gun delivers a point resolution of 86 pm. Single images with atomic level detail are collected by one camera while another camera provides real-time video recording. A scanning unit offers high angle annular dark field and secondary electron images, and compositional microanalysis is performed with energy dispersive spectroscopy. In summary, III-V nanowires have been grown successfully in situ across a range of controlled conditions such as substrate temperature and precursor partial pressures. Atomic resolution images and movies, and spectroscopy data taken during this growth allow detailed measurements of structures, compositions and growth rates – data that are otherwise hard or impossible to obtain from ex situ studies – and further our understanding of the mechanisms of crystal growth. (Less)
Abstract (Swedish)
ETEM, Environmental Transmission Electron Microscopy är en teknik som ger möjlighet att betrakta reaktioner mellan fasta föreningar, högsmältande vätskor och gaser i realtid, och med atomär upplösning.Ett Hitachi 3300S ETEM har designats och uppförts av nCHREM, the national Center for High Resolution Electron Microscopy vid Lund Universitet. Artikeln beskriver tekniska lösningar i systemet och de första resultaten från mikroskopet. Mikroskopet är sammanbyggt med ett fulständigt MOCVD-system och är det enda i sitt slag i världen.
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author
; ; and
organization
publishing date
type
Contribution to journal
publication status
published
subject
keywords
ETEM
in
Semiconductor Science and Technology
volume
35
issue
3
article number
034004
pages
11 pages
publisher
IOP Publishing
external identifiers
  • scopus:85082240660
ISSN
0268-1242
DOI
10.1088/1361-6641/ab6bfd
language
English
LU publication?
yes
id
d1fba77d-d7c9-4539-8059-fe95babbacf8
date added to LUP
2020-01-31 14:53:41
date last changed
2020-12-29 04:25:09
@article{d1fba77d-d7c9-4539-8059-fe95babbacf8,
  abstract     = {A new environmental transmission electron microscope has been installed in Lund in order to investigate the growth of III-V semiconductor nanowires by metal-organic chemical vapour deposition. We report here on the concepts behind the design of the facility and on details of the operation, and we refer to early results to highlight the new information that can be accessed from in situ studies. The installation includes a gas handling system that delivers the precursors to III-V semiconductor growth under controlled conditions. The core microscope is a Hitachi HF-3300S 300 kV TEM with additional pumping that can handle up to 6 Pa of gas injected into the specimen area, or up to 400 Pa if an apertured lid is fitted to the holder. Various custom specimen holders incorporate precursor gas lines, a heating chip or a double tilt mechanism. The polepiece gap has been expanded to accommodate the holders, while the combination of an imaging aberration corrector and a cold field emission gun delivers a point resolution of 86 pm. Single images with atomic level detail are collected by one camera while another camera provides real-time video recording. A scanning unit offers high angle annular dark field and secondary electron images, and compositional microanalysis is performed with energy dispersive spectroscopy. In summary, III-V nanowires have been grown successfully in situ across a range of controlled conditions such as substrate temperature and precursor partial pressures. Atomic resolution images and movies, and spectroscopy data taken during this growth allow detailed measurements of structures, compositions and growth rates – data that are otherwise hard or impossible to obtain from ex situ studies – and further our understanding of the mechanisms of crystal growth.},
  author       = {Wallenberg, Reine and Hetherington, Crispin and Dick, Kimberly and Jacobsson, Daniel},
  issn         = {0268-1242},
  language     = {eng},
  number       = {3},
  publisher    = {IOP Publishing},
  series       = {Semiconductor Science and Technology},
  title        = {In situ metal-organic chemical vapour deposition growth of III–V semiconductor nanowires in the Lund environmental transmission electron microscope},
  url          = {https://lup.lub.lu.se/search/ws/files/75721753/Hetherington_et_al_2020_Semicond._Sci._Technol._10.1088_1361_6641_ab6bfd.pdf},
  doi          = {10.1088/1361-6641/ab6bfd},
  volume       = {35},
  year         = {2020},
}