A new silicon phosphide, Si12P5 : Formation conditions, structure, and properties
(1997) In Journal of Vacuum Science and Technology A 15(2). p.394-401- Abstract
- The formation conditions, structure, and properties of the recently discovered phosphide, Si12P5 (initially assigned Si7P3), have been studied using x-ray diffraction, high-resolution transmission electron microscopy, photospectrometry, and a four-point probe. The phosphide formed in amorphous Si-P alloy thin films with 30, 35 and 44 at. % P after annealing at 1000°C for 30 min. During annealing at 1100°C, the phosphide dissociated through P evaporation. The Si12P5 phase is proposed to have rhombohedral symmetry with a P31m space group and a C5W12 structure. The hexagonal lattice parameters measured were a = 6.16±0.05 Å and c = 13.17±0.01 Å. The optical band gap and the electrical resistivity of the phosphide were determined to be 1.55 eV... (More)
- The formation conditions, structure, and properties of the recently discovered phosphide, Si12P5 (initially assigned Si7P3), have been studied using x-ray diffraction, high-resolution transmission electron microscopy, photospectrometry, and a four-point probe. The phosphide formed in amorphous Si-P alloy thin films with 30, 35 and 44 at. % P after annealing at 1000°C for 30 min. During annealing at 1100°C, the phosphide dissociated through P evaporation. The Si12P5 phase is proposed to have rhombohedral symmetry with a P31m space group and a C5W12 structure. The hexagonal lattice parameters measured were a = 6.16±0.05 Å and c = 13.17±0.01 Å. The optical band gap and the electrical resistivity of the phosphide were determined to be 1.55 eV and 5 mΩ cm, respectively. The Gibbs free energy diagram for the Si-P system was modified to include this new Si12P5 phase. (Less)
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https://lup.lub.lu.se/record/d22d302e-7ae1-4f0c-a9aa-fba23b73bf05
- author
- Carlsson, JRA ; Madsen, LD ; Johansson, MP ; Hultman, L ; Li, XH ; Hentzell, HTG and Wallenberg, LR LU
- organization
- publishing date
- 1997-03-01
- type
- Contribution to journal
- publication status
- published
- subject
- in
- Journal of Vacuum Science and Technology A
- volume
- 15
- issue
- 2
- pages
- 8 pages
- publisher
- American Institute of Physics (AIP)
- external identifiers
-
- scopus:0031534238
- ISSN
- 0734-2101
- DOI
- 10.1116/1.580497
- language
- English
- LU publication?
- yes
- id
- d22d302e-7ae1-4f0c-a9aa-fba23b73bf05
- date added to LUP
- 2023-10-31 16:01:05
- date last changed
- 2023-11-02 15:42:28
@article{d22d302e-7ae1-4f0c-a9aa-fba23b73bf05,
abstract = {{The formation conditions, structure, and properties of the recently discovered phosphide, Si12P5 (initially assigned Si7P3), have been studied using x-ray diffraction, high-resolution transmission electron microscopy, photospectrometry, and a four-point probe. The phosphide formed in amorphous Si-P alloy thin films with 30, 35 and 44 at. % P after annealing at 1000°C for 30 min. During annealing at 1100°C, the phosphide dissociated through P evaporation. The Si12P5 phase is proposed to have rhombohedral symmetry with a P31m space group and a C5W12 structure. The hexagonal lattice parameters measured were a = 6.16±0.05 Å and c = 13.17±0.01 Å. The optical band gap and the electrical resistivity of the phosphide were determined to be 1.55 eV and 5 mΩ cm, respectively. The Gibbs free energy diagram for the Si-P system was modified to include this new Si12P5 phase.}},
author = {{Carlsson, JRA and Madsen, LD and Johansson, MP and Hultman, L and Li, XH and Hentzell, HTG and Wallenberg, LR}},
issn = {{0734-2101}},
language = {{eng}},
month = {{03}},
number = {{2}},
pages = {{394--401}},
publisher = {{American Institute of Physics (AIP)}},
series = {{Journal of Vacuum Science and Technology A}},
title = {{A new silicon phosphide, Si12P5 : Formation conditions, structure, and properties}},
url = {{http://dx.doi.org/10.1116/1.580497}},
doi = {{10.1116/1.580497}},
volume = {{15}},
year = {{1997}},
}